Taiyo Yuden Co., Ltd.

Fujitsu Media Devices Limited

Fujitsu Corporation

Taiyo Yudenco., Ltd.

Shunichi Aikawa

Jyouji Kimura

Keiji Tsuda

Takumi Kooriike

Takashi Matsuda

Kazunori Inoue

Yasufumi Kaneda

Kaoru Sakinada

Osamu Kawachi

Masayuki Kitajima

Masanori Ueda

Takashi Yamashita

Michio Miura

Naoyuki Mishima

Akira Moriya

Toru Uemura

Kunihisa Wada

Yoshinori Kondou

Masanori Kimura

Keji Tsuda

Hikomasa Oshita

An acoustic wave device includes: a piezoelectric substrate on which an acoustic wave element and an electrode pad connected to the acoustic wave element are formed; a first resin part having a first opening located above a function area in which an acoustic wave is excited by the acoustic wave element and a second opening located above the electrode pad; a second resin part that covers the first opening and has a third opening located above the second opening; and a metal layer formed on the electrode pad in the second opening, the first opening and the second opening being inversely tapered.

Acoustic wave device and method for manufacturing the same

An electronic component includes a substrate, a functional element formed on the substrate, a plurality of terminals including a first terminal electrode connected to the functional element and a second terminal electrode layered on the first terminal electrode, and a feed line, one end of which is electrically connected to the first terminal electrode and the other end of which reaches an edge of the substrate, wherein the feed line includes a first portion directly reaching the edge, and a second portion branching from the first portion and then reaching the edge.

Electronic component and method of manufacturing the same

There is provided a method of fabricating an electronic device including flip-chip mounting a device chip on a substrate, and supplying solder between adjacent device chips by supplying the solder on the device chips and applying heat and pressure on the solder, and a contact angle of the device chip and the solder is greater than 90&#xb0; with the solder melted.

Electronic device and method of fabricating the same

An acoustic wave device includes a substrate, an acoustic wave element, an electrode pad, a resin portion and a metal post. The acoustic wave element is provided on the substrate. The electrode pad is provided on the substrate, is electrically coupled to the acoustic wave element, and has an Au layer and an adhesive layer formed on the Au layer and having an opening. The resin portion is provided on the substrate so as to cover the acoustic wave element and the electrode pad, and has a through-hole formed to expose a surface of the electrode pad. The metal post is provided in the through-hole and contacts with the Au layer through the opening of the adhesive layer. The adhesive layer is provided between the Au layer and the resin portion.

Acoustic wave device with adhesive layer and method of manufacturing the same

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) formed on the piezoelectric substrate, an interconnection electrode that is provided on the piezoelectric substrate and is connected to the IDT, the IDT being made of a metal identical to that of the IDT, an inorganic insulation layer that is provided on the piezoelectric substrate so that at least the interconnection electrode is exposed, an insulative resin layer that is located on an interface between the inorganic insulation layer and a portion of the interconnection electrode exposed from the inorganic insulation layer and is formed so as to cover a side surface of the interconnection electrode, and a metal layer that is provided on the interconnection electrode and the insulative resin layer.

Surface acoustic wave device and method of fabricating the same

A surface acoustic wave device is enable to prevent electrode erosion, without any specific environmental process. The surface acoustic wave device includes a piezoelectric substrate, an electrode for the formation of surface acoustic wave, being formed on the piezoelectric substrate, on the piezoelectric substrate, a frame-shaped layer surrounding the electrode for the formation of surface acoustic wave, and a lid body formed on the frame-shaped layer by bonding, so as to form a hollow portion between the lid body and the electrode for the formation of surface acoustic wave. The frame-shaped layer and the lid body include photosensitive resin, and the lid body includes a through hole, and the through hole is sealed with a halogen-free thermosetting resin.

Method of manufacturing a surface acoustic wave device

A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.

Method of manufacturing an acoustic wave device

An electronic device includes a package substrate made of an insulator, a device chip that is flip-chip mounted on the package substrate, and a seal portion sealing the device chip. The seal portion includes sidewalls made of solder. The whole seal portion including the sidewalls may be made of solder. The electronic device may include a metal layer provided on the seal portion.

A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.

Acoustic wave device

A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.

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Yokohama, Japan

Shunichi Aikawa