United Microelectronics Corp.

Shun-Yu Huang

Hui-Lin Wang

Che-Wei Chang

Chen-Yi Weng

Jing-Yin Jhang

Chun-Lung Chen

Po-Kai Hsu

Chih-Wei Kuo

Hsuan-Hsu Chen

Ching-Hua Hsu

Si-Han Tsai

Yi-Yu Lin

Yi-Wei Tseng

Ju-Chun Fan

Ya-Jyuan Hung

Yi-Xiang Chen

A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is formed on the first electrode layer. A patterned second electrode layer is formed on the MTJ stack layer and used as a mask. A first ion beam etching process is performed to etch the patterned second electrode layer and pattern the MTJ stack layer and the first electrode layer to form a second electrode, an MTJ stack structure, and a first electrode. A first protective layer is formed to cover the second electrode and the MTJ stack structure. A second ion beam etching process is performed to remove a portion of the MTJ stack structure and a portion of the first electrode.

Method of fabricating magnetic tunneling junction device

A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Magnetoresistive random access memory structure

Growing community of inventors

Kaohsiung, Taiwan

Shun-Yu Huang