Sharp Kabushiki Kaisha Corporation

Shun Mitarai

Masaya Nagata

Yasuyuki Itoh

Jun Kudo

Seiichi Yokoyama

Nobuhito Ogata

Shigeo Ohnishi

Akira Okutoh

Tohru Hara

A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a Ta Si N film or a Hf Si N film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO film which are sequentially formed.

Semiconductor device including capacitor with lower electrode including iridium and iridium oxide layers

A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a Ta,Si,N,film or a Hf,Si,N,film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO,film which are sequentially formed.

Semiconductor memory device and production method of the same

There is provided a semiconductor memory device with extremely less deterioration of characteristics of dielectric thin film and with high stability. A TaSiN barrier metal layer,is formed on a Pt upper electrode,This TaSiN barrier metal layer,has electrical conductivity and hydrogen-gas blocking property and besides has an amorphous structure stable in high temperature region without crystallizing even during firing for crystallization of an oxide ferroelectric thin film (SBT thin film),Then, hydrogen gas generated during later formation of a second interlayer insulating film,is reliably blocked from invading into the oxide ferroelectric thin film,by which characteristic deterioration of the oxide ferroelectric thin film,due to hydrogen gas is prevented.

Semiconductor memory device with less characteristic deterioration of dielectric thin film

In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

Growing community of inventors

Nishinomiya, Japan

Shun Mitarai