Sony Corporation

Sony Semiconductor Solutions Corporation

Shun Mitarai

Masahiro Tada

Shusaku Yanagawa

Shinya Morita

Koichi Ikeda

Akira Akiba

Masahiro Tanaka

Takashi Kinoshita

Shuichi Oka

Koji Naniwada

Shinji Rokuhara

Takahiro Igarashi

Kazunao Oniki

Kiwamu Adachi

Mitsuo Hashimoto

Kousuke Seki

Yasuyuki Ito

Mikihiro Taketomo

Hiroshi Ozaki

Hiizu Ootorii

Minehiro Tonosaki

Yusaku Kato

Hiizu Ohtorii

Masanari Yamaguchi

Akihiko Ochiai

Izuho Hatada

Hiroyuki Shigeta

Katsuji Matsumoto

Takeshi Kodama

Naoki Kakoiyama

Susumu Hogyoku

Katsuaki Asano

Yuto Tanaka

Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. The semiconductor device includes a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface. The semiconductor device further includes wirings provided provided on the first and second surfaces, a first insulating film that covers the first surface, a second insulating film that covers the second surface, and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first or second insulating films.

Semiconductor device

The present technology relates to a semiconductor device and a method of manufacturing the same capable of improving reliability of a glass substrate on which a wiring layer is formed. A semiconductor device is provided with a glass substrate on a front surface or front and back surfaces of which a wiring layer including one or more layers of wiring is formed, an electronic component arranged inside a glass opening formed on the glass substrate, and a redistribution layer that connects the wiring of the glass substrate and the electronic component. The present technology is applicable to, for example, a high-frequency front-end module and the like.

Semiconductor device including glass substrate having improved reliability and method of manufacturing the same

The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.

Semiconductor device, manufacturing method thereof, and electronic apparatus

The present disclosure relates to a wiring board and a manufacturing method that simultaneously solve problems of stress and heat release A wiring board as one aspect of the present disclosure includes a glass substrate as a core member, and a plurality of through holes arranged in a cyclic manner in the glass substrate. The through holes are filled with different kinds of filling materials. A wiring board manufacturing method as one aspect of the present disclosure includes: a through hole formation step of forming through holes arranged in a cyclic manner in a glass substrate serving as a core member; and a filling step of forming a protecting sheet on the glass substrate, and filling through holes with a filling material through openings formed in the protecting sheet. The present disclosure can be applied to a wiring board that has a through-electrode-equipped glass substrate as the core member.

Wiring board, and manufacturing method

A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration layer that penetrates the wiring substrate and is patterned, forming the wiring on a front surface of the wiring substrate in which the alteration layer has been formed, and filling an electrode material in a hole formed by removing the alteration layer, thereby forming the through glass via that connects the wiring on the front surface of the wiring substrate and the wiring on a back surface side thereof.

Wiring substrate, method of manufacturing wiring substrate, component-embedded glass substrate, and method of manufacturing component-embedded glass substrate

There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path.

Manufacturing method and wiring substrate with through electrode

There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Radiation detector, imaging unit, and imaging and display system

A signal transmission cable has a cable including a dielectric layer and a metallic layer. The signal transmission cable further includes a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.

Signal transmission cable

A small high frequency device that is able to inhibit generation of an eddy current and a parasitic capacity and shows superior high frequency characteristics is provided. The high frequency device includes: a substrate having a depression; a dielectric layer over the substrate; and a plurality of electronic devices which are provided in the dielectric layer or on the dielectric layer, and at least one of which is opposed to the depression.

High frequency device

A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.

A method for manufacturing a micromachine is provided which can remove a sacrifice layer and can perform sealing without using a specific packaging technique. In a method for manufacturing a micromachine () including an oscillator (), a step of forming a sacrifice layer around a movable portion of the oscillator (); a step of covering a sacrifice layer with an overcoat film (), followed by the formation of a penetrating hole () reaching the sacrifice layer in the overcoat layer (); a step of performing sacrifice-layer etching for removing the sacrifice layer using the penetrating hole () in order to form a space around the movable portion; and a step of performing a film-formation treatment at a reduced pressure following the sacrifice-layer etching so as to seal the penetrating hole ().

Process for fabricating micromachine

An electromechanical element includes a mechanically movable element through a hollow formed on a substrate, and a plurality of holes formed in the movable element. In the electromechanical element, the plurality of holes are arranged such that at least two holes are in a same line, at least one hole is in another line located adjacent to the one line with at least two holes, and a distance between one of the holes arranged in the same line and the other hole located at the closest position from the one of the two holes arranged in the same line is longer than a distance between the holes adjacently arranged in the same line.

Electromechanical element, electric circuit device and production method of those

A high frequency device including an electrostatic type vibrator, a pad, and a circuit. The electrostatic type vibrator is operable via a DC bias voltage. The pad is configured to supply the DC bias voltage. The circuit is positioned electrically between the pad and the vibrator. The circuit is configured to stabilize the DC bias voltage. The circuit and the high frequency signal device are on a common substrate.

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Kanagawa, Japan

Shun Mitarai