Advanced Optoelectronic Technology, Inc.

Zhongshan Innocloud Intellectual Property Services Co., Ltd.

Shun-Kuei Yang

Po-Min Tu

Shih-Cheng Huang

Chia-Hung Huang

Ya-Wen Lin

Tzu-Chien Hung

Chia-Hui Shen

Ching-Hsueh Chiu

An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.

LED die

A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

Manufacturing method for an LED

A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer.

Method for manufacturing light emitting diode

A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 &#x3bc;m to 2.5 &#x3bc;m.

Light emitting diode and manufacturing method thereof

A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Manufacturing method for an LED comprising a nitrided AlN reflecting layer

A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga&#x2014;N bonds on the bottom surface has an N-face polarity.

Light emitting diode

An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.

Semiconductor structure having low thermal stress

A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

Method for manufacturing light emitting chip

A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

Light emitting diode with peripheral circular slots and method for manufacturing the same

A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.

Light emitting element package

A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

Semiconductor light-emitting structure having low thermal stress

A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed.

Semiconductor structure having low thermal stress and method for manufacturing thereof

A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.

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Hsinchu, Taiwan

Shun-Kuei Yang