Shin-etsu Chemical Co., Ltd.

Shun Kikuchi

Jun Hatakeyama

Masaki Ohashi

Kazuhiro Katayama

Masahiro Fukushima

Takeshi Nagata

Chuanwen Lin

Kousuke Ohyama

A positive resist composition is provided comprising a base polymer end-capped with a sulfonium salt containing a carboxylate anion having a sulfide group linked thereto. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

Positive resist composition and pattern forming process

A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Positive resist composition and patterning process

A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Molecular resist composition and patterning process

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Joetsu, Japan

Shun Kikuchi