Applied Materials, Inc.

Other

Lam Research Corporation

Shun Jackson Wu

Yixing Lin

Clifford Stow

Jennifer Y Sun

Hong Peng Wang

Senh Thach

Brian T West

Daniel O Clark

Yu Wen Chang

Xuyen Pham

Wen Chiang Tu

Behzad Shamlou

Hong Shih

John Edward Daugherty

Ananda H Kumar

Brian C Lue

Armen Avoyan

Robert W Wu

Padmanabhan Krishnaraj

Ramkishan Rao Lingampalli

Yaobo Yin

Linda Jiang

Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Methodology for cleaning of surface metal contamination from electrode assemblies

We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

Semiconductor processing apparatus including plasma-resistant, welded aluminum structures

We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330&#xb0; C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus

We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330&#xb0; C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

Clean aluminum alloy for semiconductor processing equipment

Plasma-resistant, welded aluminum structures for use in semiconductor apparatus

The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the substrate handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450&deg; C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant. A preferred material for construction of the substrate handling blade is single crystal sapphire. Other single crystal materials, such as single crystal silicon and single crystal silicon carbide should also perform well. In a particularly preferred embodiment of the substrate handling blade, a capacitance sensor is used to indicate the presence of a semiconductor substrate on the surface of the handling blade and a structure through which vacuum is applied may be used to hold (chuck) the semiconductor substrate to the surface of the handling blade.

Robot blade for handling of semiconductor substrates

The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.

Electrostatic chuck and method for fabricating the same

The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the wafer handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450.degree. C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant. A preferred material for construction of the substrate handling blade is single crystal sapphire. Other single crystal materials, such as single crystal silicon and single crystal silicon carbide should also perform well. In a particularly preferred embodiment of the substrate handling blade, a capacitance sensor is used to indicate the presence of a semiconductor substrate on the surface of the handling blade and a structure through which vacuum is applied may be used to hold (chuck) the semiconductor substrate to the surface of the handling blade.

Growing community of inventors

Cupertino, CA, United States of America

Shun Jackson Wu