Murata Manufacturing Co., Ltd.

Shun Imai

Kiichiro Takenaka

Satoshi Tanaka

Takayuki Tsutsui

Taizo Yamawaki

Masatoshi Hase

Hidetoshi Matsumoto

Ikuma Ota

Hiroaki Inose

A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value.

High-frequency signal processing apparatus and wireless communication apparatus

When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.

Semiconductor device

A power amplifier includes a first amplifier and a second amplifier which include large and small size elements. An RF input signal is amplified by the first and second amplifiers. An output of the first amplifier is connected to an input of a first output matching circuit. An output of the second amplifier is connected to an input of a second output matching circuit. An output of the second output matching circuit is connected to an RF signal output terminal. In a high power state, the RF input signal is amplified by the first amplifier. In a low power state, the RF input signal is amplified by the second amplifier. In amplification with low power and high frequency, reactances of the second output matching circuit are set at predetermined values. In amplification with low power and low frequency, the reactances of the second output matching circuit are set at larger values.

Power amplifier and operating method thereof

Growing community of inventors

Kyoto, Japan

Shun Imai