Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Shun-ichiro Uchimura

Hiroshi Suzuki

Daisuke Makino

Hidetaka Sato

Takayuki Saito

Mitsumasa Kojima

Hidetaka Satou

Hiroyuki Morishima

Hiroyoshi Sekine

Toul Kikuchi

A coating fluid for forming an oxide coating, having a good thermal stability and superior coating-forming properties is provided, which fluid comprises a reaction product obtained by subjecting (A) an alkoxysilane or aryloxysilane expressed by the formula RmSi(OR).sub.4-m wherein R is 1-4C alkyl or aryl and m is 0 to 2 and (B) a metal alkoxide or aryloxide compound expressed by the formula M(OR').sub.n wherein M is Mg, B, P, Zr, Y, Ti or Ba, R' is 1-4C alkyl or aryl and n is a valence of the metal atom to hydrolysis and condensation using a catalyst in the presence of a solvent.

Coating for forming an oxide coating

A multilayer wiring structure produced by using a special poly(amic acid) ester oligomer for making an interlayer insulating film has an almost flattened surface without suffering from level differences of underlying wiring patterns.

Process for producing multilayer wiring structure

There are disclosed a process for producing a polyamide acid having at least one siloxane bond, which comprises carrying out the reaction of:

Process for producing polyamide acid having siloxane bonds and polyimide

A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.

Polyimide precursor resin composition and semiconductor device using the

There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

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Hitachi, Japan

Shun-ichiro Uchimura