Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Shun-ichi Saeki

Yoshiaki Kamigaki

Takaaki Hagiwara

Tadashi Muto

Kazuyoshi Shoji

Yasurou Kubota

Kazuto Izawa

Yuko Nabetani

Shin-ichi Minami

A time circuit is provided for a nonvolatile memory device which can electrically be written into. When the write operation on a particular memory cell lasting a relatively long period of time is specified from an external device, the memory device stops the write operation on that memory cell, irrespective of the external write operaiton specification, when the time set on the timer circuit has elapsed. The nonvolatile memory device has memory cells, each consisting of a single transistor. The erase operation on the memory cells is controlled according to a current flowing through these memory cells.

Nonvolatile semiconductor memory device

Growing community of inventors

Higashimurayama, Japan

Shun-ichi Saeki