Jsr Corporation

Subaru Corporation

Shun Aoki

Toru Kimura

Masayoshi Ishikawa

Tatsuya Sakai

Hiromitsu Tanaka

Yoshio Takimoto

Goji Wakamatsu

Yuushi Matsumura

Kenji Mochida

Takuya Hayashida

Kan-go Chung

Tomohiro Matsuki

A vehicle capable of operating in a self-driving mode includes a self-driving indicator lamp and a controller. The self-driving indicator lamp can turn on so as to be visually recognized from an outside of the vehicle in the self-driving mode. The controller controls a lighting state of the self-driving indicator lamp. The self-driving indicator lamp includes a right indicator lamp and a left indicator lamp respectively disposed in right and left parts of the vehicle. Lighting states of the right indicator lamp and the left indicator lamp can be controlled independently. When the vehicle starts to move in the self-driving mode from a parked or stopped state, the lighting states of the right indicator lamp and the left indicator lamp which have turned off during when the vehicle has been parked or stopped, in a manner similar to each other so as to indicate a frontward or rearward starting direction.

Vehicle capable of operating in self-driving mode

A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

Cleaning composition for semiconductor substrate

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Pattern-forming method, resin, and composition

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Tokyo, Japan

Shun Aoki