Sony Corporation

Chinese Academy of Sciences

Suzhou Institute of Nano-tech and Nano-bionics

Shulong Lu

Masao Ikeda

Hiroshi Yoshida

Hui Calvin Yang

Shiro Uchida

Masayuki Arimochi

Xinhe Zheng

Masaru Kuramoto

Tomomasa Watanabe

Takashi Tange

Pan Dai

Qiangjian Sun

Jianya Zhang

Zhiwei Xing

Ichiro Nomachi

Yukun Zhao

Xuefei Li

Junhua Long

The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

Solar cell and manufacturing method thereof

The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of AlGaN epitaxial layer on the sacrificial layer, wherein 0<n≤1; growing a nanopillar array containing GaN materials on the AlGaN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials. In addition, a total thickness of the buffer layer and the sacrificial layer required by the epitaxial structure can be small, and there is no need for additional catalyst during an epitaxial growth process, which is beneficial for reducing epitaxial costs and process difficulty. The present invention is practical in use, and can provide technical support for invisible semiconductor devices and super-flexible devices.

Super-flexible transparent semiconductor film and preparation method thereof

A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure

Growing community of inventors

Suzhou, China

Shulong Lu