Applied Materials, Inc.

Advanced Micro-fabrication Equipment, Inc. Asia

Shulin Wang

Lee Luo

Aihua Chen

Mei Yin Chang

Ming Xi

Ming Li

Steven Aihua Chen

Xianzhi Tao

Li Fu

Zvi Lando

Ulrich Kroemer

Errol Antonio C Sanchez

Errol C Sanchez

Henry Ho

Sheeba J Panayil

Khaled Ahmed

Christopher Sean Olsen

Abhilash J Mayur

Majeed Foad

Yi Ma

Mark Yam

Haifan Liang

Gary Eugene Miner

Ramanujapuram A Srinivas

Frederick C Wu

Kevin Laughton Cunningham

Russell C Ellwanger

Toi Yue Becky Leung

Robert C McIntosh

Christopher G Quentin

Sean M Seutter

Gerald Zheyao Yin

Vedapuram S Achutharaman

Kegang Huang

Mahalingam Venkatesan

Alexander Tam

Sang H Ahn

Keith K Koai

R Suryanarayanan Iyer

Xiaoliang Jin

Steven Yencheng Chen

Sanjeev Tandon

AiHua Chen

Binh Hoa Tran

Brian Metzger

Yehuda Demayo

Qing Lv

Jonathan C Pickering

Luo Lee

Errol A C Sanchez

Zoran Dragojlovic

Huan Luo

Aihua (Steven) Chen

A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550&#xb0; C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

Method and apparatus for forming a high quality low temperature silicon nitride layer

In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 &#x212b; or less and tungsten nitride layer may have an electrical resistivity of about 380 &#x3bc;&#x3a9;-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

Tungsten nitride atomic layer deposition processes

A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Gas distribution assembly for use in a semiconductor work piece processing reactor

Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1&#xd7;10atoms/cmto about 1&#xd7;10atoms/cm, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800&#xb0; C. or higher, such as about 1,000&#xb0; C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000&#xb0; C. or greater, such within a range from about 1,050&#xb0; C. to about 1,400&#xb0; C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

Gate electrode dopant activation method for semiconductor manufacturing

Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR&#x2014;Si(R')&#x2014;Si(R&#x2032;)&#x2014;NR(amino(di)silanes), R&#x2014;Si&#x2014;N&#x2550;N&#x2550;N (silyl azides), R&#x2032;&#x2014;Si&#x2014;NR&#x2014;NR(silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R&#x2032; comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

Method for silicon nitride chemical vapor deposition

Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1&#xd7;10atoms/cm.

Method of forming a controlled and uniform lightly phosphorous doped silicon film

Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300&#xb0; C. to about 490&#xb0; C. A silicon source is also fed into the single wafer chamber.

Deposition of nano-crystal silicon using a single wafer chamber

A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550&#xb0; C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.

Method for forming a high quality low temperature silicon nitride film

A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

Cyclical deposition of tungsten nitride for metal oxide gate electrode

In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal

A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

Bi-layer silicon film and method of fabrication

An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Emissivity-change-free pumping plate kit in a single wafer chamber

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Campbell, CA, United States of America

Shulin Wang