Oluma, Inc.

Digirad Corporation

Ifos, Inc.

Shulai Zhao

Bo Pi

Lars S Carlson

John F Sheridan

Alan Mollet

Zhihao Chen

Jian H Li

Zheng Chen

Wei-Cheng Wilson Lin

Robert Morse

Richard Wilson

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Fabrication of low leakage-current backside illuminated photodiodes

Waveguide sensors having a side-polished coupling port at the waveguide cladding to sense a material based on material-specific optical attenuation by evanescent coupling at the coupling port.

Optical multiphase flow sensor

Fiber sensors formed on side-polished fiber coupling ports based on evanescent coupling. Such sensors may be configured to measure various materials and may be used to form multi-phase sensing devices.

Sensing devices based on evanescent optical coupling

Fiber tap monitors formed on side-polished fiber coupling ports based on evanescent coupling.

Fiber tap monitor based on evanescent coupling

Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved.

Fiber devices having side evanescent coupling port

A semiconductor interconnection device having a semiconductor die, a plurality of epoxy bonds, and an array of insulating islands is disclosed. The semiconductor die has a plurality of conductive contacts. The plurality of epoxy bonds has a metallic substance such as silver. The epoxy bonds are configured to provide interconnection between the semiconductor die and an external structure. The plurality of epoxy bonds is selectively applied to the plurality of conductive contacts on the semiconductor die and corresponding conductive contacts on the external structure. The array of insulating islands is coupled to the plurality of conductive contacts. The islands are configured to prevent migration of the metallic substance from the plurality of epoxy bonds to the semiconductor die through the plurality of conductive contacts.

Insulator/metal bonding island for active-area silver epoxy bonding

Techniques for coupling optical energy between a side-polished port of a fiber in one substrate and a coupling port of a waveguide in another substrate.

Evanescent optical coupling between a waveguide formed on a substrate and a side-polished fiber

Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved. An index-changing liquid is used to control the evanescent optical coupling in response to a control signal.

In-fiber variable optical attenuators and modulators using index-changing liquid media

Thin-film techniques in forming fiber devices that engage fibers to a substrate with different material properties. Structure buffering, diffusion bonding, and thickness monitoring may be achieved by such thin-film techniques.

Thin film structures in devices with a fiber on a substrate

Optical wavelength-division multiplexers and demultiplexers based on Mach-Zehnder interferometers via evanescent coupling through a side-polished fiber port of a fiber.

Wavelength-division multiplexers and demultiplexers based on mach-zehnder interferometers and evanescent coupling

Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved. A coupling control layer is formed between two fibers to control the evanescent coupling for optical switching operations.

Growing community of inventors

Encinitas, CA, United States of America

Shulai Zhao