Sony Corporation

Shuji Yoneda

Shinji Watanabe

Koji Miyata

Masakazu Baba

Seiji Fukae

Kenji Yamauchi

Yoichi Goto

Masato Oishi

Tamotsu Shinohara

Katsuhiko Takeuchi

Hiroshi Yumoto

Tomokazu Mukai

A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.

Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device

A semiconductor device having a substrate including a photodiode; a resin layer formed on an upper surface of the substrate, the resin layer not covering a light receiving region of the photodiode, the resin layer including at least one groove surrounding the light receiving region; and a molding resin portion formed by mold-sealing the photodiode with the resin layer thereon so as not to cover the light receiving region.

Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture

A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.

Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same

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Kagoshima, Japan

Shuji Yoneda