Tohoku University

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Murata Manufacturing Co., Ltd.

Skyworks Solutions, Inc.

Other

Sony Corporation

Denso Corporation

Nippon Kayaku Kabushiki Kaisha

Chiba University

Shuji Tanaka

Michio Kadota

Masayoshi Esashi

Yutaka Nonomura

Takahiro Nakayama

Hitoshi Yamada

Ui Yamaguchi

Mitsutoshi Makihata

Masanori Muroyama

Motohiro Fujiyoshi

Sakae Matsuzaki

Hirofumi Funabashi

Yoshiyuki Hata

Yoshimi Ishii

Joerg Froemel

Hiroyuki Nakamura

Tetsuya Kimura

Satoshi Mori

Teruhisa Akashi

Yoshiteru Omura

Yuichi Takai

Akihiko Teshigahara

Takao Iwaki

Nao Honda

Kenya Hashimoto

Toshihiko Takahata

Takashiro Tsukamoto

Tomohiro Ishikawa

Mamoru Mori

Koichi Ohtaka

An acoustic wave device that can achieve a good characteristic in a superhigh frequency band of 6 GHz or higher by using an overtone. The device includes: a piezoelectric substrate; an electrode provided in such a way as to be in contact with the piezoelectric substrate; and an acoustic multilayer film provided in such a way as to be in contact with the piezoelectric substrate and/or the electrode and is configured to use an overtone of resonance characteristics of a surface acoustic wave. The electrode includes an interdigital transducer provided on one of surfaces of the piezoelectric substrate. The surface acoustic wave that is the overtone preferably has a velocity of 9000 m/s or higher. The acoustic multilayer film is preferably composed of an acoustic low impedance film and an acoustic high impedance film which are alternately stacked.

Acoustic wave device

An acoustic wave device includes a support substrate, a piezoelectric body including LiTaO, a first electrode on a first main surface of the piezoelectric body, a second electrode on a second main surface, an acoustic-layer laminated body between a support substrate and the piezoelectric body. The azimuth angle of the piezoelectric body is (about 85° to 95°, about 85° to 95°, about 5° to 65°) represented in Euler angles.

An acoustic wave device includes a support substrate, a piezoelectric body, an acoustic layer laminate, first and second electrodes, and a lead-out electrode. The first electrode is on a first main surface of the piezoelectric body, the second electrode is on a second main surface of the piezoelectric body, the lead-out electrode is on the first main surface or the second main surface of the piezoelectric body, the lead-out electrode is electrically connected to the first electrode or the second electrode, side surface grooves extend from the first main surface side of the piezoelectric body, and the side surface grooves are provided in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode.

Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

Acoustic wave devices

Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaOor LiNbOlayer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

Methods and assemblies related to fabrication of acoustic wave devices

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substratecontaining 70 mass % or greater of silicon dioxide (SiO), a piezoelectric thin filmincluding LiTaOcrystal or LiNbOcrystal and disposed on the substrate, and an interdigital transducer electrodedisposed in contact with the piezoelectric thin film

Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric plate formed from LiTaOor LiNbOdisposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ρ in a range 1.50 g/cm<ρ≤6.00 g/cm, 6.00 g/cm<ρ≤12.0 g/cm, or 12.0 g/cm<ρ≤23.0 g/cm, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.

Surface acoustic wave devices and related methods

An electrostatic acoustic wave generating device and an electrostatic speaker making entries of dust, water, moisture, etc. into the device and the speaker, allowing reduction in power. A plate-like fixed electrode has a through hole penetrating the thickness of the fixed electrode. A vibrating body and a vibrating electrode each having a plate-like shape are arranged closer to one surface and closer to the other surface of the fixed electrode respectively, and are movable in the respective thickness directions thereof. A connection member connects the vibrating body and the vibrating electrode to each other through the through hole of the fixed electrode to cause the vibrating body and the vibrating electrode to move toward the same direction. Voice signal input is capable of applying a voltage to the fixed electrode, the vibrating body, and the vibrating electrode to move the vibrating body between the fixed electrode and the vibrating body.

Electrostatic acoustic wave generating device and electrostatic speaker

Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength &#x3bb; can include a quartz substrate and a piezoelectric plate formed from LiTaOor LiNbOdisposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2&#x3bb;. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density &#x3c1; in a range 1.50 g/cm&#x3c;&#x3c1;&#x2264;6.00 g/cm, 6.00 g/cm&#x3c;&#x3c1;&#x2264;12.0 g/cm, or 12.0 g/cm&#x3c;&#x3c1;&#x2264;23.0 g/cm, and a thickness greater than 0.148&#x3bb;, greater than 0.079&#x3bb;, or greater than 0.036&#x3bb;, respectively.

Surface acoustic wave device having mass-loaded electrode

Provided are a pressure sensor which exhibits exceptional performance and a method of producing the same. The pressure sensor includes: a silicon substrate having a cavity; a diaphragm which is formed of a metallic glass and has a tensile stress in a range in which a resonant frequency is higher than an audible range; and a counter electrode which is insulated from the diaphragm and has a plurality of holes. The diaphragm and the counter electrode are disposed on the silicon substrate to face each other with a gap therebetween, the diaphragm and the counter electrode being released from the silicon substrate by the cavity.

Pressure sensor and method of producing the same

An elastic wave device includes a first IDT electrode on a first main surface of a LiNbOsubstrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Elastic wave device

A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Surface acoustic wave sensor

A sensor chip includes first and second electrodes that are exposed from the sensor chip and are made from materials different from each other. The sensor chip further includes a detection circuit that detects a target substance included in an analyte, the detection circuit being driven by a potential difference between the first and second electrodes, the potential difference being generated by an oxidation at the first electrode and a reduction at the second electrode while the analyte contacts the first and second electrodes, the analyte including an electrolyte.

Sensor chip, detection system, and method of detecting target substance in analyte

An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.

Growing community of inventors

Sendai, Japan

Shuji Tanaka