Mitsubishi Materials Corporation

Shuji Nishimoto

Yoshiyuki Nagatomo

Nobuyuki Terasaki

Yoshirou Kuromitsu

Toshiyuki Nagase

Masahito Komasaki

Koya Arai

Kimihito Nishikawa

Satoshi Takakuwa

A method of producing a copper/ceramic bonded body, the copper member having a composition having a Cu purity of 99.96 mass % or more, a balance of inevitable impurities, a P content of 2 mass ppm or less, and a total content of Pb, Se and Te of 10 mass ppm or less, the method includes bonding the laminated copper member and the ceramic member by pressing and heating, wherein an average crystal grain size of the copper member before bonding is 10 μm or more, an aspect ratio is 2 or less, and a pressing load is 0.05 MPa or more and 1.5 MPa or less, a heating temperature is 800° C. or higher and 850° C. or lower, and a holding time at the heating temperature is 10 minutes or longer and 90 minutes or shorter.

Production method for copper/ceramic joined body, production method for insulated circuit board, copper/ceramic joined body, and insulated circuit board

An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 &#x3bc;m or larger and 50 &#x3bc;m or smaller.

Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate

An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.

Ag underlayer-attached metallic member, Ag underlayer-attached insulating circuit substrate,semiconductor device, heat sink-attached insulating circuit substrate, and method for manufacturing Ag underlayer-attached metallic member

A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.

Semiconductor device

An elongated trench () is formed so as to connect the Ag layer () and the exposed part of the circuit layer stretching out around the Ag layer (). The trench () a narrow and elongated recessed part penetrating the glass layer () and the aluminum oxide film (A) from the Ag layer () to reach the surface () of the circuit layer (). The extended part (), which is a part of the Ag layer () flatted along with the inner surface () of the trench (), is formed in the trench (). The Ag layer () and the circuit layer () are electrically connected directly by Ag with a low electric resistance value by the extended part () in the portion where the trench () is formed.

Power module substrate, method of producing same, and power module

A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cmto 4,000 cmindicated by I, and a maximum value of intensity in a wavenumber range of 450 cmto 550 cmis indicated by I, I/Iis 1.1 or greater.

Power module substrate with Ag underlayer and power module

A power module substrate includes an insulating layer, a circuit layer that is formed on a first surface of the insulating layer, and a metal layer that is formed on a second surface of the insulating layer, in which a first base layer is laminated on a surface of the metal layer on the opposite side of the surface to which the insulating layer is provided, and the first base layer has: a first glass layer that is formed at the interface with the metal layer; and a first Ag layer that is laminated on the first glass layer.

Power module substrate, power module substrate with metal part, power module with metal part, method for producing power module substrate, and method for producing power module substrate with metal part

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

There are provided a solder joint structure, a power module using the joint structure, a power module substrate with a heat sink and a method of manufacturing the same, as well as a solder base layer forming paste which is disposed and fired on a metal member to thereby react with an oxide film generated on the surface of the metal member and form the solder base layer on the metal member, capable of suppressing the occurrence of waviness and wrinkles on the surface of the metal member even at the time of loading the power cycle and heat cycle and improving the joint reliability with a joint member.

Solder joint structure, power module, power module substrate with heat sink and method of manufacturing the same, and paste for forming solder base layer

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Saitama, Japan

Shuji Nishimoto