University of California

Japan Science and Technology Agency

Nichia Chemical Industries, Limited

Nichia Corporation

Cree Gmbh

Other

Agency of Industrial Science and Technology

King Abdulaziz City for Science and Technology

Soraa, Inc.

Soraa Laser Diode, Inc.

Nichia Kagaku Kogyo K.k.

Regents of the Univeristy of California

Nichia Kagaky Kogyo K.k.

Japan Science and Technology Center

Shuji Nakamura

Steven P DenBaars

James Stephen Speck

Benjamin A Haskell

Naruhito Iwasa

Masayuki Senoh

Shinichi Nagahama

Hitoshi Sato

Robert M Farrell

Umesh Kumar Mishra

Arpan Chakraborty

Troy J Baker

Daniel F Feezell

Anurag Tyagi

Michael Iza

Motokazu Yamada

Takao Yamada

Kenji Iso

Kanji Bando

Hirokuni Asamizu

John F Kaeding

Rajat Sharma

Tokuya Kozaki

Hiroyuki Kiyoku

Takashi Mukai

Erin C Young

Makoto Saito

Mathew C Schmidt

Hisashi Yamada

Max Batres

Hong Zhong

Michael D Craven

Hisashi Masui

Hiroaki Ohta

Asako Hirai

Stacia Keller

Evelyn Lynn Hu

Kazuyuki Chocho

Tadao Hashimoto

Daniel A Cohen

Paul Thomas Fini

Casey O Holder

Tal Margalith

Benjamin P Yonkee

Daniel Bryce Thompson

Monica Hansen

P Morgan Pattison

Tetsuo Fujii

Yan Gao

Roy B Chung

Zhongyuan Jia

Frederic Stephane Diana

Po Shan Hsu

Kwang-Choong Kim

Michael Coulter

Kwang Choong Kim

James W Raring

Masahiko Sano

George R Brandes

Derrick S Kamber

Jacob J Richardson

Frederick F Lange

Claude C A Weisbuch

Zhen Chen

Kathryn Merced Kelchner

Bilge M Imer

Siddha Pimputkar

Natalie DeMille

Akihiko Murai

Feng Wu

Kenneth J Vampola

Ingrid Koslow

Dong-Seon Lee

Daniel A Haeger

Paul Rudy

Melvin McLaurin

Vinod Khosla

Kenji Fujito

Koji Tanizawa

Lee McCarthy

Tomotsugu Mitani

John T Leonard

Asad J Mughal

Hirohiko Hirasawa

Shin-Ichiro Kawabata

Paul Morgan Pattison

Jun Seok Ha

Pierre Lamond

Eu Jin Hwang

Richard T Ogawa

Hiroshi Marui

Christina Ye Chen

Shigemasa Matsuda

John Adam Edmond

James Ibbetson

Alexander Sztein

Henri Benisty

You-Da Lin

Adele Clare Tamboli

David Hwang

A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Method for processing of semiconductor films with reduced evaporation and degradation

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Highly efficient gallium nitride based light emitting diodes via surface roughening

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where &#x2212;15&#x3c;x&#x3c;&#x2212;1 and 1&#x3c;x&#x3c;15 degrees.

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/&#x2212; 15 degrees in the c-direction

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 &#x3bb;, or at least 20 &#x3bb;, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In&#x2014;Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

III-nitride surface-emitting laser and method of fabrication

A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

Contact architectures for tunnel junction devices

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Hybrid growth method for III-nitride tunnel junction devices

A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cmdrive current and less than 15% at 35 A/cmdrive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 &#x3bc;m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 &#x3bc;m. A flip chip display device is also disclosed.

Methods for fabricating III-nitride tunnel junction devices

A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

III-nitride tunnel junction with modified P-N interface

A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Transparent light emitting device with light emitting diodes

Filament LED light bulb

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Growing community of inventors

Santa Barbara, CA, United States of America

Shuji Nakamura