Renesas Technology Corp.

Renesas Electronics Corporation

Shuji Matsuo

Yasuko Yoshida

Kota Funayama

Katsuhiro Uchimura

Yutaka Takeshima

Takao Kamoshima

Kojiro Horita

When a void is caused in an interlayer insulating film on a semiconductor substrate, the invention prevents short circuit between two or more contact plugs that sandwich the void therebetween via a conductive film buried in the void at the time of formation of the contact plugs. An element isolation region having an upper surface lower than a main surface of the semiconductor substrate is formed inside a trench in the main surface of the semiconductor substrate, so that a void formed immediately above the semiconductor substrate in an active region and a void formed immediately above the element isolation region are divided from each other. In this manner, a conductive film is prevented from being buried in the second void.

Semiconductor device and method of manufacturing the same

A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSilayer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

Manufacturing method of semiconductor device

A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSilayer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

Growing community of inventors

Hitachinaka, Japan

Shuji Matsuo