Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Shuji Kodama

Toshiaki Tsutsumi

Takio Ohno

Takeshi Kamino

There is provided a semiconductor device with a configuration in which a dummy silicide areais provided in the vicinity of a non-silicide areato easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.

Capture of residual refractory metal within semiconductor device

Analog-to-digital converting circuitry includes first and second analog-to-digital converting units. A converting start controlling circuit sends out converting start timing signals START1 and START2 which are out of phase with each other. When the first or second analog-to-digital converting unit receives the corresponding converting start timing signal START1 or START2 from the converting start controlling circuit, it samples and holds an analog value of an input signal, and then successively converts the analog value into an n-bit digital signal bit-by-bit and sends out the digital signal. An output selecting circuit outputs the digital signals from the first and second analog-to-digital converting units alternatingly.

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Tokyo, Japan

Shuji Kodama