Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Fujitsu Corporation

Honda Motor Co., Ltd.

Shuji Kikuchi

Masayuki Tomoyasu

Naoki Takayama

Masahiko Matsudo

Haruhisa Mori

Hiroo Ono

Go Nakamoto

Hisanori Misawa

Tadayuki Kojima

Manabu Murakami

Hidetaro Nishimura

Riki Tomoyoshi

Hiroshi Ohmori

Satoshi Hasui

Shigenori Kawana

Nobuyuki Abe

Kouichi Mori

Shuichiro Shinkai

Sakae Kawashima

Takaya Tsujimaru

Mitsuyuki Yamaguchi

The present invention provides a system capable of properly controlling the switching of the operation state of each of a plurality of arithmetic processing resources according to an increase or a decrease in an arithmetic processing load. A distributed processing control systemincludes a load estimation unitthat estimates an estimation arithmetic processing load at a first point of time in a future from a reference point of time, and a state control unitthat starts the processing for switching the operation state of an arithmetic processing resource Sj so as to satisfy a first condition, in which the estimated arithmetic processing load is included in a predetermined range of an estimation processing capacity of the arithmetic processing resource Sj expected to be activated at the first point of time.

Distributed processing control system and distributed processing control method

According to one embodiment, a unit includes battery modules each including an assembled battery including battery cells and a monitoring device, a BMU to communicate with the battery modules, a first drawer holding the battery module, a second drawer holding the BMU, and a housing containing the first drawer and the second drawer. The first and second drawers include first composite connectors secured to a side of the housing, which is almost orthogonal to a direction in which to insert the drawers into the housing. The housing has second composite connectors which mate with the first composite connectors, thereby to connect communication lines between the monitoring device and the BMU and the main-circuit lines between the assembled batteries of the battery modules.

Secondary battery unit

A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.

Ion implantation system

An ion implantation equipment for implanting ion beam into an implanting target characterized in that an electrons are induced to the direction of an ion beam being injected to said implanting target, and a predetermined bias voltage is applied between a plasma generation chamber and Faraday.

Ion implantation equipment

A primary particle beam irradiation apparatus comprising a stage on which a target is placed; a device for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor for detecting a secondary ion, generated by an irradiation of the primary particle beam, from the stage or the target; and a device, connected to the irradiating device and the secondary ion sensor, for controlling the irradiating means on the basis of an output signal from the secondary ion sensor. Further, a method for irradation of a primary particle beam comprising the step of detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.

Primary particle beam irradiation apparatus and method of irradiation

An ion implant apparatus which forms ions from an ion source into an ion beam to implant the ions into a target to be ion-implanted through an ion beam introduction tube. The ion implant apparatus comprises: radiation means for radiating an electron beam, the radiating means fixed on the ion beam introduction tube; and a target for being radiated by an electron beam, said target reflecting the electron beam to generate a reflectance beam, the electron beam causing a secondary electron beam to be emitted from the electron beam target, the electron beam target being formed so as to prevent the reflectance beam and the secondary electron beam from being directly radiated on the target to be ion-implanted. The apparatus can keep high energy electrons from the surface of a wafer thereby to prevent the wafer from being charged negatively, and can trap the high energy electrons in the measuring system thereby to decrease errors in measuring a number of dopant atoms.

Ion implant apparatus

Growing community of inventors

Kumamoto, Japan

Shuji Kikuchi