Kabushiki Kaisha Toshiba

Shuji Katsui

Yuuichi Mikata

Hiroshi Akahori

Ichiro Mizushima

Tsutomu Sato

Masayuki Tanaka

Yoshitaka Tsunashima

Takashi Nakao

Akihito Yamamoto

Shinji Mori

Hiroshi Itokawa

Shigehiko Saida

Masaki Kamimura

Masahiko Murano

A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

Method of fabricating semiconductor device

The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640&#xb0; C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640&#xb0; C. or more.

Reliable semiconductor device and method of manufacturing the same

A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device

The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640&deg; C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640&deg; C. or more.

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New York, NY, United States of America

Shuji Katsui