Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Shuji Kamata

Hiroshi Kono

Makoto Mizukami

Hiroyuki Irifune

Masashi Kuwahara

A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a first active region; and a third electrode. The first semiconductor layer is located between the first electrode and the second electrode. The second semiconductor layer is located above the first semiconductor layer. The first active region is next to the second semiconductor layer in a second direction. The first active region includes a first upper portion and a first upper portion. An average value of a width in the second direction of the first lower portion is greater than an average value of a width in the second direction of the first upper portion. The third semiconductor layer is electrically connected with the second electrode.

Semiconductor device

A semiconductor module includes a metal substrate having a mounting surface, a first conductive plate on the mounting surface, an insulating substrate on the first conductive plate, a second conductive plate on the insulating substrate, a conductive pad on the insulating substrate, a semiconductor element on the second conductive plate, a circuit board electrically connected to the conductive pad, a resin case connected to the metal substrate and extending along at least a portion thereof, and around the first conductive plate, the insulating substrate, the second conductive plate, the conductive pad, the semiconductor element, and the circuit board, and a silicone gel in a region bounded by the metal substrate and the resin case. The circuit board comprises a plurality of planar surfaces oriented perpendicular to the mounting surface of the metal substrate.

Semiconductor module

A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.

A semiconductor device includes a semiconductor element in a frame body. The semiconductor element includes a first electrode electrically connected to an electrode block provided on a first side of the semiconductor element. A connection element, which in some embodiments may be a portion of the electrode block, connects the electrode block to the frame body. The semiconductor element is sealed within an enclosure formed at least in part by the frame body, the connection element, and the electrode block. The connection element includes a fragile portion which has a resistance to increases in pressure or temperature that is less than other portions of the connection element. That is, in general, the fragile portion will fail before other portions of the connection element when pressure or temperature increases, which may occur when, for example, the semiconductor element breaks down.

In a current detecting cell of a MOS-type semiconductor device with a current detection function, the area of the contact portions of source regions which contact a current detecting electrode is greater than that of that contact portion of a base region which contacts the current detecting electrode. With this feature, a parasitic resistance does no sharply decrease even if a detected voltage increases, and therefore, current can be detected accurately.

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Nonoichi Ishikawa, Japan

Shuji Kamata