Kabushiki Kaisha Toshiba

Alpad Corporation

Samsung Electronics Co., Ltd.

Shuji Itonaga

Hideto Furuyama

Mitsuyoshi Endo

Yukihiro Nomura

Miyuki Shimojuku

Akihiro Kojima

Yasuhiko Akaike

Kenichi Ohashi

Yasuharu Sugawara

Kazuyuki Yahiro

Tadaaki Hosokawa

A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

Manufacturing apparatus of semiconductor device, and manufacturing method of semiconductor device

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.

Semiconductor light emitting device and method of manufacturing the same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.

According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

Semiconductor light emitting device

A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

Semiconductor light emitting device and semiconductor light emitting apparatus

In a semiconductor device according to the present invention, a diffusion layer is formed on a silicon substrate, and a Silicon oxide film is deposited thereon. A hole communicating with the diffusion layer is formed in the silicon oxide film. A silver bromide emulsion is applied to the silicon oxide film having the hole by the spin coat technique. The silver bromide emulsion is irradiated with light through a mask to leave only that portion of the emulsion which is exposed by the light. By doing so, a metal wiring is formed integrally with a via hole, and thus decreased in resistance and suitable for forming the via hole. Consequently, a semiconductor device having such a wiring can be obtained easily, inexpensively.

Growing community of inventors

Yokohama, Japan

Shuji Itonaga