Kabushiki Kaisha Toshiba

Kabushiki Kasiha Toshiba

Shuji Hayase

Yoshihiko Nakano

Shinji Murai

Yasunobu Onishi

Satoshi Mikoshiba

Rikako Kani

Toru Ushirogouchi

Hiroyasu Sumino

Yasuhiko Sato

Rumiko Horiguchi

Toshiro Hiraoka

Akiko Hirao

Koji Asakawa

Naomi Shida

Eishi Shiobara

Kenji Todori

Takeshi Okino

Ken Uchida

Makoto Nakase

Masaki Narita

Yukihiro Mikogami

Seiro Miyoshi

Hideto Matsuyama

Sawako Yoshikawa

Lois Hobson

Yasuyuki Hotta

Atsushi Ando

Takeo Ito

Kenji Sano

Shinetsu Fujieda

Maki Yonetsu

Rumiko Hayase

Akira Yoshizumi

Atsushi Kamata

Sawako Fujioka

Hideo Hirayama

Tatsuro Beppu

Nobutada Aoki

Naoki Tajima

Katsushi Nishizawa

Hideki Shimada

Kazuo Unoki

The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.

Dye sensitized solar cell and method for manufacturing dye sensitized solar cell

Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.

Ion conductive film and fuel cell using the same

Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polymer in which polysulfonic acid is crosslinked by a metal ion having a valency of not less than two, a second polymer in which polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two, a third polymer in which a quaternary ammonium salt of polysulfonic acid is crosslinked by a metal ion having a valency of not less than two and a fourth polymer in which a quaternary ammonium salt of polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two.

Raw material kit for electrolytic composition, electrolytic composition, and dye-sensitized solar cell

Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound and a fuel cell including the composite body. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits a resonance structure when protonated. The nitrogen-containing compound having a resonance structure when protonated is capable of assuming a chemical structure in which the multiple bond represented by the double bond is moved, with the atoms constituting the molecule not changing their positions.

Method of forming a pattern

A curing catalyst comprising at least one of a cationic curing catalyst component and an organo-metallic compound component. At least one of these components is capable of reversibly repeating the dissolution and precipitation through heating and cooling. The cationic curing catalyst component includes in its molecule at least one substituted or unsubstituted hydrocarbon group having 10 or more carbon atoms, or at least one cyclic organic structure having a substituted or unsubstituted hydrocarbon group having 10 or more carbon atoms.

Curing catalyst, resin composition, resin-sealed semiconductor device and coating material

Alicycli c group-containing monomer

The present invention provides an electrolyte composition, comprising an electrolyte containing at least one kind of an imidazolium salt selected from the group consisting of 1-methyl-3-propyl imidazolium iodide, 1-methyl-3-isopropyl imidazolium iodide, 1-methyl-3-butyl imidazolium iodide, 1-methyl-3-isobutyl imidazolium iodide and 1-methyl-3-sec-butyl imidazolium iodide, a halogen-containing compound dissolved in the electrolyte, and a compound dissolved in the electrolyte and containing at least one element selected from the group consisting of N, P and S, the compound being capable of forming an onium salt together with the halogen-containing compound.

Electrolyte composition, photosensitized solar cell using said electrolyte composition, and method of manufacturing photosensitized solar cell

A monomer represented by the following general formula (m-1):

Monomer, high molecular compound and photosensitive composition

A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0&deg; C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

Method of forming pattern

A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.

Method of forming a pattern using polysilane

A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.

Material of forming silicon oxide film, silicon oxide film, method of

There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.

Method of forming an insulating film pattern and photosensitive

An optical functional element including two diffraction gratings having metal films formed on their surfaces, which are arranged to oppose each other to form a photonic band, and an optical functional film interposed between these diffraction gratings, the optical functional film consisting of a polymer containing an optical functional material, such as a nonlinear optical material and electro-optic material, dispersed in the polymer.

Optical functional element comprising photonic crystal

Growing community of inventors

Yokohama, Japan

Shuji Hayase