Semiconductor Energy Laboratory Co., Ltd.

Shuji Fukai

Tetsuji Ishitani

Yoshiharu Hirakata

Ryota Imahayashi

Daisuke Kubota

Takeshi Nishi

Ryo Hatsumi

Munehiro Kozuma

Hiroki Inoue

Takeshi Aoki

Gen Fujii

Erika Takahashi

Fumika Akasawa

Sho Nagao

Takayuki Ikeda

Akihisa Shimomura

Hiroki Adachi

Shingo Eguchi

Kaoru Hatano

Daiki Nakamura

Akio Yamashita

Yohei Monma

Koji Moriya

Yusuke Kubota

Shintaro Harada

Saki Obana

Yoji Nagano

Mika Jikumaru

Ryoto Imahayashi

Kanako Kunizaki

A semiconductor device using unipolar transistors, in which high and low levels are expressed using high and low power supply potentials, is provided. The semiconductor device includes four transistors, two capacitors, two wirings, two input terminals, and an output terminal. A source or a drain of the first transistor and a source or a drain of the fourth transistor are electrically connected to the first wiring. A gate of the fourth transistor is electrically connected to the first input terminal, and a gate of the second transistor is electrically connected to the second input terminal. A source or a drain of the second transistor and a source or a drain of the third transistor are electrically connected to the second wiring. The first transistor, the second transistor, and the two capacitors are electrically connected to the output terminal.

Logic circuit formed using unipolar transistor, and semiconductor device

A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.

Logic circuit and semiconductor device formed using unipolar transistor

Provided is a display system with which visibility can be improved. The display system includes an imaging device, a control device, and a display device. The imaging device includes first pixels arranged in a matrix, and the display device includes second pixels arranged in a matrix. The imaging device has a function of generating first image data on the basis of the illuminance of light emitted to the first pixels. The control device has a function of forming a histogram on the basis of the first image data and dividing the histogram into two or more illuminance ranges. The control device has a function of converting the gray levels which are included in the first image data as information and correspond to the illuminance of the light emitted to the first pixels, thereby generating second image data obtained by performing dynamic range compression on the first image data. The compressibility for the dynamic range compression is calculated for each illuminance range by the control device on the basis of the value of integral in each illuminance range of the histogram.

Display system and operation method of the display system

To provide a display device with high display quality, an eye-friendly display device, a display device with low power consumption, a display device with a reduced change in voltage written to a pixel, or a novel display device. In the display device, a first image signal in which one of grayscale levels of a first pixel and an adjacent second pixel is near white and the other is near black is written. The first image signal is compared with a second image signal. When the grayscale levels of the second image signal written to the first pixel and the second pixel are halftone, the second image signal is written an odd number of times greater than or equal to three times. When the grayscale levels of the second image signal written to the first pixel and the second pixel are near white or near black, the second image signal is written once. The interval between the writing of the first image signal and the writing of the second image signal is longer than or equal to 1 second and shorter than or equal to 10,000 hours.

Operation method of display device

The liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrate. The first substrate includes a transistor including an oxide semiconductor film including a channel formation region; a pixel electrode electrically connected to the transistor; an insulating layer in contact with the pixel electrode; and a first common electrode in contact with the insulating layer. The second substrate faces the first substrate and includes a second common electrode. A negative liquid crystal material is used for the liquid crystal layer. The specific resistivity of the liquid crystal material is greater than or equal to 1.0&#xd7;10&#x3a9;&#xb7;cm and less than or equal to 1.0&#xd7;10&#x3a9;&#xb7;cm.

Liquid crystal display device

A flicker of an FFS liquid crystal display device that is driven at a low refresh rate is reduced. In an FFS liquid crystal display, a pixel electrode and a first common electrode included in a liquid crystal element are formed on an element substrate side, and a second common electrode is formed on another substrate (counter substrate) side. By making the first and second common electrodes have the same potential, generation of a residual DC voltage can be suppressed in a pixel. Thus, even when a refresh rate is lowered, change in transmittance of a pixel can be suppressed in a data retention period, so that a flicker can be reduced.

Liquid crystal display device and electronic device

The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa&#xb7;m] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1&#xd7;10wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm].

Manufacturing method of a liquid crystal device comprising an alignment film formed under reduced pressure

An object is to improve productivity related to a laser light irradiation step in a bonding technique of substrates using glass frit. A highly airtight sealing structure or a highly airtight light-emitting device, which can be manufactured with high productivity, is provided. When a glass layer by melting glass frit or a sintered body by sintering glass frit is irradiated with laser light, in order to increase the efficiency, a light-absorbing material is attached to a surface of the glass layer. The laser light irradiation is performed on the light-absorbing material and the glass layer. The substrates are fixed with the glass layer therebetween.

Method for bonding substrates, method for manufacturing sealing structure, and method for manufacturing light-emitting device

An object is to provide a liquid crystal display device using a liquid crystal material exhibiting a blue phase, in order to enable a higher contrast. In a liquid crystal display device which includes a liquid crystal layer exhibiting a blue phase, a first structure body and a second structure body are provided over a first electrode layer (a pixel electrode layer) and a second electrode layer (a common electrode layer), respectively. The first structure body and the second structure body are insulators each having a higher dielectric constant than a liquid crystal material used for the liquid crystal layer, and are provided to project into the liquid crystal layer.

By providing a pixel electrode layer in a center of a liquid crystal layer sandwiched between a first common electrode layer and a second common electrode layer, a structure in which the following two optical elements are stacked can be obtained: a first liquid crystal element including the first common electrode layer, the liquid crystal layer, and the pixel electrode layer; and a second liquid crystal element including the pixel electrode layer, the liquid crystal layer, and the second common electrode layer.

Liquid crystal display device having a pixel electrode layer positioned between first and second common electrode layers

There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor

To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.

Liquid crystal display device and method for manufacturing the same

To improve the response speed of liquid crystal molecules when a liquid crystal display device is changed from an on state to an off state. A liquid crystal display device that includes a liquid crystal material between a substrate and a counter substrate; a plurality of pixels over the substrate; and a microstructure which is provided over the substrate, is in contact with the liquid crystal material, and includes a movable portion and a method for manufacturing the liquid crystal display device are provided. The microstructure may include a lower electrode, an upper electrode, and a space between the lower electrode and the upper electrode. The microstructure is manufactured through the steps of forming the lower electrode over the substrate, forming a sacrificial layer over the lower electrode, forming the upper electrode over the sacrificial layer, and removing the sacrificial layer by etching to form the space.

Liquid crystal display device comprising a microstructure and method for manufacturing the same

In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

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Kanagawa, Japan

Shuji Fukai