Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Shujhih Chen

Chiayu Lee

Xiaowen Lv

Longqiang Shi

Huafei Xie

Bo He

Yongwei Wu

Miao Duan

Chunche Hsu

Yongming Yin

Pei Jiang

Wei Zhang

Tianhong Wang

Minggang Liu

Yang Sun

Wenying Li

Lijun Zhang

Shuichih Lien

A device for transferring micro light-emitting diodes includes a collection tube and an elastic port. The collection tube has a first end and a second end arranged oppositely, and a caliber of the collection tube is greater than a diameter of the micro light-emitting diodes. The elastic port is disposed at the first end, and a caliber of the elastic port is less than the diameter of the micro light-emitting diodes. The micro light-emitting diodes are pressed into the collection tube from the elastic port. The collection tube can store the micro light-emitting diodes. The device can effectively improve transfer speed.

Device, method, and display device for transferring micro light-emitting diodes

A transfer device for a micro light-emitting diode (micro LED) of the present application includes a collecting tube and a driving device. The collecting tube has a first end and a second end disposed oppositely, and the collecting tube includes a collecting opening and a storage tube, and the collecting opening is connected to the storage tube, and the collecting opening is disposed at the first end. The driving device is disposed at the second end, and the driving device is configured to provide a driving force, wherein the driving device is configured to provide the driving force to pick up the micro LED from the collecting opening into the storage tube so that the storage tube is able to store and stack at least two micro LEDs.

Transfer device and transfer method for micro light-emitting diode (micro LED), and display device

Embodiments of the present disclosure provide a display panel comprising an array substrate, wherein the array substrate comprises a common electrode with a low-level voltage, pixel circuit units and photosensitive transistors. The pixel circuit units are electrically connected to gate lines, data lines and the common electrode. And the photosensitive transistors are electrically connected with the pixel circuit units and the common electrode.

Display panel and display device

The invention discloses a driving method and a device for a light-emitting element. The method includes: acquiring a display image; calculating a backlight brightness required for the display image; and selecting at least one pulse signal from the preset plurality of pulse signals to drive the light emitting element according to the backlight brightness.

Driving method and device for light-emitting element

A switching circuit is signally-connected to an initial trigger signal, a detection circuit and the GOA circuit. Upon a low voltage level of a low potential signal, the switching circuit is turned on to transmit the initial trigger signal to the GOA circuit so that the LCD panel works normally. Upon a high voltage level of the low potential signal, the switching circuit is turned off so that the GOA circuit does not conduct the initial trigger signal to protect the LCD panel from burn-out.

Protection system for goa circuit and liquid crystal display panel

The present application provides an LED substrate and a method for manufacturing an LED display panel. The LED substrate comprises a substrate, a colloid, and LED chips. The colloid is set on the substrate, and the LED chips comprise a first end surface and a second end surface, wherein the first end surface and the second end surface are set opposite to each other, the first end surface is for fixedly connecting a thin film transistor substrate, and the second end surface is a light outputting surface. The second end surface of the LED chips is fixedly set on the substrate by the colloid.

LED substrate and method for manufacturing LED display panel

A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

Method of preparing perovskite light-emitting layer and display application thereof

A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Light-emitting device having surface-treated hole transport layer and manufacturing method thereof

A pixel driving circuit and a display panel are provided. The pixel driving circuit includes a source of a second thin film transistor electrically connected to a drain of a first thin film transistor, a gate of a sixth thin film transistor configured to receive a third control signal, a source of the sixth thin film transistor electrically connected to a second node, and a drain of the sixth thin film transistor electrically connected to an anode of a light emitting device.

Pixel driving circuit and display panel

A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.

Thin-film transistor and manufacturing method thereof

A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

Thin film transistor, manufacturing method of same, and CMOS inverter

A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes an anode, a luminous layer, and a cathode, which are disposed in a stacked manner, and a material of the luminous layer includes a perovskite material. A first transport layer is further provided between the luminous layer and the anode, and the first transport layer is configured to transport holes. Alternatively, a second transport layer is further provided between the cathode and the luminous layer, and the second transport layer is configured to transport electrons.

Light-emitting device and manufacturing method thereof

A display panel and a display device are provided. The display panel includes pixel units arranged in an array, scan signal lines, data signal lines, and pulse width modulation signal lines. Each scan signal line is coupled to a row of the pixel units and outputs a scan signal to the pixel units. Each data signal line is coupled to a column of the pixel units and outputs a data signal to the pixel unit. Each pulse width modulation signal line is coupled to a row of the pixel units and outputs a pulse width modulation signal to the pixel unit and controls lighting time of the pixel unit to achieve different gray levels. The display panel can achieve low brightness driving display and avoid occurrence of excessive brightness caused by excessive current of the light emitting element.

The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

Manufacturing method of CMOS inverter

A color filter substrate, a display panel and a method of manufacturing color filter substrate are provided. The color filter substrate comprising a first glass substrate and a blocking wall formed on a surface of the first glass substrate which is toward to an array substrate, the blocking wall is a projection structure of the surface of the first glass substrate, and the blocking wall is located in a non-display region. The invention further provides correspondingly display panel and method of manufacturing color filter substrate. The color filter substrate, display panel and method of manufacturing color filter substrate of this disclosure, which using the glass substrate on CF side to be aligning film blocking wall. It could control boundary of the aligning film on CF side, and prevent water vapor pass into inside panel of the aligning film on CF side caused circuit corrosion.

Growing community of inventors

Shenzhen, China

Shujhih Chen