Sharp Kabushiki Kaisha Corporation

Shuichiro Yamamoto

Toshiyuki Kawakami

Shigetoshi Ito

Yukio Yamasaki

Shuichi Hirukawa

Masataka Ohta

Fumio Yamashita

A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized MgZnO (0&#x3c;x1&#x3c;1) that can transmit 75% or more of light emitted from the emission layer, sequentially stacked in this order on a support substrate.

Nitride semiconductor ultraviolet light-emitting device

In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

Nitride semiconductor laser chip and fabrication method thereof

At each side of a ridge stripe, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe

Growing community of inventors

Tenri, Japan

Shuichiro Yamamoto