Hitachi Chemical Company, Ltd.

Shuichiro Adachi

Masato Yoshida

Takeshi Nojiri

Mitsunori Iwamuro

Tetsuya Sato

Kaoru Okaniwa

Keiko Kizawa

Akihiro Orita

Yoichi Machii

Takahiko Kato

Youichi Machii

Toru Tanaka

Keiji Watanabe

Takashi Naito

Hiroki Yamamoto

Takuya Aoyagi

Takashi Hattori

Yasushi Kurata

Hirotaka Hamamura

Masatoshi Morishita

Mieko Matsumura

Tooru Tanaka

Yoshiaki Kurihara

Tsuyoshi Hayasaka

The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

P-type diffusion layer forming composition

A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR). In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each Rindependently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell

The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell

The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.

Element and photovoltaic cell

A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

Paste composition for electrode and photovoltaic cell

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Tsukuba, Japan

Shuichiro Adachi