Shenzhen China Star Optoelectronics Technology Co., Ltd.

Other

Shuichih Lien

Wei Wei

Yicheng Kuo

Yuanchun Wu

Chihtsung Kang

Yuanjun Hsu

Shujhih Chen

Meng Zhang

Liangfen Zhang

Chiayu Lee

Changcheng Lo

Hoising Kwok

Man Wong

Rongsheng Chen

A display panel and a display device are provided. The display panel includes pixel units arranged in an array, scan signal lines, data signal lines, and pulse width modulation signal lines. Each scan signal line is coupled to a row of the pixel units and outputs a scan signal to the pixel units. Each data signal line is coupled to a column of the pixel units and outputs a data signal to the pixel unit. Each pulse width modulation signal line is coupled to a row of the pixel units and outputs a pulse width modulation signal to the pixel unit and controls lighting time of the pixel unit to achieve different gray levels. The display panel can achieve low brightness driving display and avoid occurrence of excessive brightness caused by excessive current of the light emitting element.

Display panel and display device

The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (), and forming the polysilicon thin film () on the substrate (), and a thickness of the polysilicon thin film () accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.

Manufacture method of polysilicon thin film and polysilicon TFT structure

A liquid crystal display device includes a liquid crystal panel and a collimated exit light backlight module. The liquid crystal panel includes a CF substrate, an array substrate, and a liquid crystal layer. The CF substrate has an upper surface on which an upper polarizer film is arranged. The array substrate has a lower surface on which a lower polarizer film is arranged. The upper polarizer film includes a view angle diffusion film arranged thereon. The collimated exit light backlight module includes two backlight sources, a metallic grating reflector plate, a wire grid polarizer, and an optic film assembly. The two backlight sources, the metallic grating reflector plate, and the wire grid polarizer collectively define a light guide chamber. The liquid crystal display device greatly improves light transmittance and light extraction efficiency and also effectively overcomes the issue of color deviation at a large view angle.

Liquid crystal display device

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Shenzhen, China

Shuichih Lien