Powdec K.k.

Shuichi Yagi

Hiroji Kawai

Shoko Echigoya

Souta Matsumoto

Hironobu Narui

Fumihiko Nakamura

This normally-off mode polarization super junction GaN-based FET has an undoped GaN layer, an AlGaN layer, an island-like undoped GaN layer, a p-type GaN layerand a p-type InGaN layerwhich are stacked in order. The FET has a gate electrodeon the uppermost layer, a source electrodeand a drain electrodeon the AlGaN layerand a p-type InGaN layerand a gate electrodewhich are located beside one end of the undoped GaN layeron the AlGaN layer. The gate electrodemay be provided on the p-type InGaN layervia a gate insulating film. At a non-operating time, n≤n<n<nis satisfied for the concentration nof the 2DEGformed in the undoped GaN layer/the AlGaN layerhetero-interface just below the gate electrode, the concentration nof the 2DEGjust below the gate electrode, the concentration nof the 2DEGin the polarization super junction region and the concentration nof the 2DEGin the part between the polarization super junction region and the drain electrode

Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment

Provided are a semiconductor device and a bidirectional field effect transistor which can easily overcome the tradeoff relation between the high voltage resistance and high speed in the semiconductor device using a polarization super junction, realize both the high voltage resistance and elimination of the occurrence of current collapse, operate at a high speed, and further the loss is low. The semiconductor device comprises a polarization super junction region and a p-electrode contact region. The polarization super junction region comprises an undoped GaN layer, an undoped AlGaN layerwith a thickness not smaller than 25 nm and not larger than 47 nm and 0.17&#x2264;x&#x2264;0.35, an undoped GaN layerand a p-type GaN layer. When the reduced thickness tR is defined as tR=u+v(1+w&#xd7;10) for the thickness u [nm] of the undoped GaN layer, the thickness v [nm] and the Mg concentration w [cm] of the p-type GaN layer, tR&#x2265;0.864/(x&#x2212;0.134)+46.0 [nm] is satisfied. The p-electrode contact region comprises a p-type GaN contact layer formed to be in contact with the p-type GaN layerand a p-electrode that is in contact with the p-type GaN contact layer.

Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same

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Oyama, Japan

Shuichi Yagi