Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Renesas Electronics Corporation

Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Electric Corporation

Nippon Steel Corporation

Nippon Steel Welding Products and Engineering Co., Ltd.

Reneasa Technology Corp.

Shuichi Ueno

Haruo Furuta

Hidekazu Oda

Yoshinori Okumura

Shigenobu Maeda

Takeharu Kuroiwa

Satoshi Shimizu

Ryoji Matsuda

Takashi Ipposhi

Tomohiro Yamashita

Shigeto Maegawa

Takashi Takenaga

Takashi Sato

Shigehiro Kuge

Takehisa Yamaguchi

Hiroshi Kato

Takashi Kuroi

Hiroshi Takada

Takeshi Koyama

Yukio Nishida

Tatsuya Fukumura

Kiyoshi Kawabata

Tsukasa Ooishi

Yiming Huai

Fukashi Morishita

Shin Hasegawa

Eugene Youjun Chen

Satoshi Ishii

Shigeru Kusunoki

Hideyuki Noda

Hiroaki Tanizaki

Masaaki Taruya

Takaharu Tsuji

Shigeki Komori

Lien-Chang Wang

Dai Oguro

Hiroshi Umeda

Shigeru Shiratake

Kenichi Nakamura

Takashi Terauchi

Atsushi Okoshi

Hiroyuki Chibahara

Hideki Shimauchi

Masashi Kitazawa

Takuji Shitara

Mitsuo Sone

Shinichi Hosomi

Akinori Kinugasa

Yasushi Ishikawa

Nobuo Mizuhashi

Nobuo Araki

Yoshiyuki Deguchi

Yasumitsu Murai

Takeshi Fukui

Fumisada Kosuge

Tomonori Yamada

Masao Kamada

Shunichi Kikuta

Tomohiro Sugawara

Takeji Kagami

Yosuke Tsuzaki

Hiroshi Oshita

Seiji Hashimoto

Takumi Nakamura

Shinya Hirano

Kenichi Ohto

Iwao Yamada

Kaito Takeshima

Muneki Nakada

Yoji Chatani

Tomohiro c/o Mitsubishi Gas Chemical Company Inc Sugawara

c/o Mitsubishi Gas Chemical Company Inc Koyama Takeshi

Atsushi c/o Mitsubishi Gas Chemical Company Okoshi

Takashi c/o Mitsubishi Gas Chemical Company Inc Sato

A magnetic sensor capable of preventing degradation of magnetic measurement accuracy is obtained. The magnetic sensor includes a first sensor portion, a second sensor portion, and a connection portion. The first sensor portion extends in a first direction. The second sensor portion is disposed at an interval from the first sensor portion in a second direction orthogonal to the first direction. The first sensor portion includes a first end and a second end that are ends in the first direction. The second sensor portion includes a third end and a fourth end that are ends in the first direction. The connection portion connects the second end and the third end. The first sensor portion, the second sensor portion, and the connection portion are constituted of a multilayer body of a magnetic sensor element and a magnet. The magnet applies a bias magnetic field to the magnetic sensor element.

Magnetic sensor and method for manufacturing same

In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Current detection apparatus and power conversion apparatus

In the electric power converting apparatus, an electric current sensor that measures an electric current that flows through a busbar includes: a magnetic flux concentrating core that has a first end portion and a second end portion that face each other so as to have a measuring space interposed; and a magnetoelectric transducer that has a magnetically sensitive portion that is disposed in the measuring space. The magnetoelectric transducer generates a signal in response to a magnitude of a magnetic field that is sensed by the magnetically sensitive portion. Where a core opening direction of the magnetic flux concentrating core is a direction that is directed from the busbar, through the measuring space, and outward from the magnetic flux concentrating core, a direction of the magnetic leakage field at the electric reactor is a direction that is different than the core opening direction.

Electric power converting apparatus

The epoxy resin curing agent of the present invention comprises a compound represented by the following formula (1):  wherein R represents a methyl group, an ethyl group, or a hydroxyl group, and n is an integer of 1 to 3.

Epoxy resin curing agent

Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics. That is, (1) the composition has a low viscosity after the mixing, a low degree of viscosity increase in standing at room temperature, and excellent workability, (2) the composition has satisfactory curability even when no curing accelerator is added, and (3) a cured product is colorless and transparent, has crack resistance, and changes its color to a small extent with long-term light irradiation and heating. The composition is suitable for an encapsulant for a photoelectric conversion element such as a blue LED or white LED. (In the formula, R's each independently represent a hydrogen atom or a methyl group, m represents an integer of 1 to 3, and n represents an integer of 2 to 8.)

Epoxy resin composition, cured object obtained therefrom, and light-emitting diode

A thermosetting resin composition which includes an epoxy-containing component and a curing agent component containing a cyclohexanetricarboxylic anhydride. The cured product of the thermosetting resin composition is excellent in surface hardness, solvent resistance, transparency, and adhesion to substrate, and is useful as a surface protection layer of the substrate.

Thermosetting resin composition for surface protection layers

Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

Method for manufacturing magnetic storage device and magnetic storage device

A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor

There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

Magnetic memory device having a recording layer

A magnetic memory device is provided in which, even when a recording layer having an asymmetric shape and a local via are formed over a strap wiring with a sufficient distance allowed therebetween, increase in the size of the magnetic memory device can be suppressed. The magnetic memory device includes the strap wiring, the local via, and a magnetic recording element (TMR element). The TMR element includes a fixed layer and the recording layer. The planar shape of the recording layer is asymmetric with respect to the direction of the easy magnetization axis of the recording layer and is symmetric with respect to the axis of symmetry perpendicular to the easy magnetization axis. The contoured portion of the recording layer on the side closer to the center of area of the recording layer is opposed to the local via formation side.

Magnetic memory device

The present invention provides an acid anhydride ester obtained by esterifying cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride and a composition of the ester, and a heat-curable resin composition and a cured product of the composition. _Provided is an epoxy resin composition using the acid anhydride ester as a curing agent for an epoxy resin, the epoxy resin composition having, for example, the following properties (1), (2), and (3): (1) the epoxy resin composition has a low viscosity at room temperature, so the components of the composition can be favorably blended with each other, (2) the acid anhydride ester has a low vapor pressure at curing temperature, so no evaporation loss occurs after curing, and the intended design of blend is capable, and (3) a cured product to be made from the composition is colorless and transparent, and changes its color to a small extent even when the product is irradiated with light or heated for a long time period. The composition is suitably used as, for example, an encapsulant for a photoelectric conversion element such as a blue LED or a white LED, a molded article, a coating, or an adhesive.

Acid anhydride ester and composition thereof, and heat-curable resin composition and cured product thereof

The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiOis formed.

Semiconductor device and method of manufacturing the same

A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.

Method for manufacturing a magnetic memory device and magnetic memory device

Growing community of inventors

Tokyo, Japan

Shuichi Ueno