Kabushiki Kaisha Toshiba

Shuichi Uchikoga

Tomomasa Ueda

Nobuyoshi Saito

Shintaro Enomoto

Shintaro Nakano

Isao Takasu

Yukitami Mizuno

Tomio Ono

Tsuyoshi Hioki

Yujiro Hara

Isao Amemiya

Kouji Suzuki

Yoshihiko Nakano

Satoshi Mikoshiba

Takashi Miyazaki

Rei Hasegawa

Hajime Yamaguchi

Akihiko Ono

Hideyuki Nishizawa

Yutaka Nakai

Hitoshi Nagato

Yasushi Shinjo

Akira Kinno

Shuzi Hayase

Norihiro Yoshinaga

Haruhi Oooka

Hideyuki Tsuji

Ryosuke Yagi

Koji Mizuguchi

Yuta Kanai

Kaichi Fukuda

Yasushi Shinjiyo

Nobuki Ibaraki

Masami Kakinoki

Takuya Shimano

Ryoko Iida

Shigeyuki Shimoto

In an embodiment, an aging determination method of a battery as a target of determination is provided. With regard to a target electrode which is at least one of a positive electrode and a negative electrode of the battery, the method estimates a correction coefficient to correct a difference between lithium concentration distributions in the target electrode at a time of charging with a first electric current and at a time of charging with a second electric current greater than the first electric current based on a difference between electric potentials of a target electrode at the time of charging with the first electric current and at the time of charging with the second electric current, and an impedance of the target electrode at the time of charging with the second electric current.

Aging determination method of battery, aging determination apparatus of battery, management system of battery, battery-mounted device, and non-transitory storage medium

An electrochemical reaction device of an embodiment includes: an electrolytic solution tank; a first electrode in the first room; a second electrode in the second room; and a generator. The electrolytic solution tank includes a first room and a second room. The first room is capable of storing a first electrolytic solution containing a first substance including carbon dioxide. The second room is capable of storing a second electrolytic solution containing a second substance. The first electrode reduces the first substance. The second electrode oxidizes the second substance. The generator is electrically connected to the first and second electrodes. The first electrode includes a conductor having a flow path penetrating through the conductor.

Electrochemical reaction device

According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.

Thin film transistor and method for manufacturing the same

According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n. A second substrate is joined to an upper surface of the first substrate and has a second refractive index nhigher than the first refractive index n. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.

Organic electroluminescence device including auxiliary electrodes

A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.

Thin film transistor, method for manufacturing same, display device, and method for manufacturing same

A light-emitting compound includes two or more carbazole skeletons each having two or more fluorine atoms at 2-, 4-, 5- and 7-positions, the carbazole skeleton represented by the formula (1): 

Light-emitting compound and organic electroluminescence device

According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.

Organic light-emitting diode

Method for manufacturing a thin film transistor including a channel protecting layer

A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

An organic light-emitting diode includes an anode and a cathode separately arranged from each other, and an emission layer between the anode and the cathode, the emission layer including a single host material and a light-emitting material, the emission layer including, when the host material has a hole transport property, a doped region on a cathode side to which an electron transport material is doped and an undoped region on an anode side to which an electron transport material is not doped, or the emission layer including, when the host material has an electron transport property, a doped region on an anode side to which a hole transport material is doped and an undoped region on a cathode side to which a hole transport material is not doped.

A display device includes: an optical cell including: a first electrode; a second electrode; an ion conduction layer facing the first electrode and the second electrode and containing a mobile ion; and a first nanostructure provided between the first electrode and the ion conduction layer and being electrically connected to the first electrode. The first nanostructure has a first plasmon resonance wavelength in a visible light region and contains a first metal element. A first metal compound layer which contains the first metal element contained in the first nanostructure and has a refractive index different from a refractive index of the ion conduction layer is formed on at least a part of a surface of the first nanostructure by applying a voltage between the first electrode and the second electrode. An amount of the first metal compound layer is different between in a first state in which a first voltage is applied between the first electrode and the second electrode and in a second state in which a second voltage different from the first voltage is applied between the first electrode and the second electrode.

Display device and display method

It is made possible to provide a low-cost highly reliable display device which does not lose the flexibility of itself and which can transmit the allowable range of the flexibility to the user. A display device includes: a display part having a display face and being flexible; and a restriction part having a plurality of first convex parts to restrict a bending quantity of the display part.

Display device

An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vis applied when detecting the photocurrent, the reverse bias voltage Vsatisfying a following relation.V&#x3c;V&#x3c;V

Optical sensor element and method for driving the same

In a display device, a first electrode and a second electrode are mounted on a first substrate, a second substrate is arranged to face the first substrate with a gap provided between the first substrate and the second substrate, and a third electrode is mounted on the second substrate. A first layer is formed in a gap between the first substrate and the second substrate at the side of the first substrate and containing a ECL material that emits light due to electrochemical oxidation or reduction. A second layer is formed in the gap between the first substrate and the second substrate at the side of the second substrate and containing a EC material having the color changed due to electrochemical oxidation or reduction.

Growing community of inventors

Tokyo, Japan

Shuichi Uchikoga