Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Shuichi Tamamushi

Munehiro Ogasawara

Takanao Touya

Shusuke Yoshitake

Soichi Inoue

Takashi Sato

Keiji Horioka

Tadahito Fujisawa

Takashi Kamikubo

Shigehiro Hara

Toshio Yamaguchi

Rieko Nishimura

Kazuto Matsuki

Shin-ichi Ito

Souji Koikari

Takeshi Fujiwara

Hiromu Inoue

Hiroyuki Ikeda

Hitoshi Higurashi

Eiji Sawa

Hidenori Sato

Hitoshi Sunaoshi

Eiji Murakami

Hiroyuki Tanizaki

Kentaro Okuda

Hiroshi Tsukada

Yusuke Sakai

Ryoichi Yoshikawa

Kazunori Onoguchi

Kiyoshi Hattori

Akihito Anpo

Hirotsugu Wada

Yoshihiro Okamoto

Shinji Sakamoto

Kenji Ohtoshi

Hirohito Anze

Satoshi Yamasaki

Kaoru Tsuruta

Naotaka Ikeda

Shuichiro Fukutome

Kazuyuki Okuzono

Eiji Nishimura

Hideo Wakamori

A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image.

Inspection system and method for inspecting line width and/or positional errors of a pattern

A charged particle beam pattern writing method according to an embodiment, includes measuring a position displacement amount of a stage above which a target object is placed, in a rotation direction; and writing a pattern of a beam image on the target object above the stage while the beam image is rotated, by using a plurality of electrostatic lenses at least one of which is arranged in a magnetic field of each of the plurality of electromagnetic lenses whose magnetic fields are in opposite directions, to avoid a focus displacement of a charged particle beam passing through the plurality of electromagnetic lenses and to correct the position displacement amount measured, in the rotation direction of the stage.

Charged particle beam pattern writing method and charged particle beam writing apparatus that corrects beam rotation utilizing a correlation table

A multi charged particle beam writing apparatus according to the present invention includes an aperture member, in which a plurality of openings are formed, to form multiple beams, a blanking plate having a plurality of blankers to respectively perform blanking deflection of a corresponding beam in multiple beams having passed through the plurality of openings of the aperture member, a blanking aperture member to block each of beams which were deflected to be in a beam off state by the plurality of blankers, a plural stage objective lens to focus multiple beams having passed through the blanking aperture member onto the target object and a plurality of electrostatic lenses, at least one of which is arranged at each stage of the plural stage objective lens, to dynamically correct defocusing of the multiple beams during writing.

Multi charged particle beam writing apparatus and multi charged particle beam writing method with fixed voltage ratio einzel lens

A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image.

Apparatus and method for pattern inspection

A move mechanism for horizontally moving a target object in an accelerating manner, includes a moving unit configured to be horizontally moved in an accelerating manner, a plate part arranged on the moving unit and supported by the moving unit at a substantially center-of-gravity height position, and a mirror part configured to reflect a laser beam for measuring a position, the mirror part being connected to the plate part such that a center-of-gravity height position of the mirror part is arranged at the substantially center-of-gravity height position of the plate part.

Move mechanism for moving target object and charged particle beam writing apparatus

The present invention provides a mask inspection apparatus and method capable of eliminating distortion of each optical image, which is caused by distortions of mirrors and flexure of a mask, and performing a mask inspection with satisfactory accuracy. A stage with the mask held thereon is moved in X and Y directions and an optical image of each pattern written onto the mask is acquired while using the results of measurement by laser interferometers (Step S). A positional displacement of the acquired optical image is corrected using polynomial equations in which pre-measured amounts of positional displacement of optical images have been fitted (Step S). Each positional displacement that remains after the polynomial correction is corrected using a map descriptive of pre-measured amounts of positional displacements (S). Each optical image subsequent to the map correction and a reference image are compared (Step S).

Mask inspection apparatus and mask inspection method

A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.

Charged particle beam drawing apparatus and proximity effect correction method thereof

A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Correcting substrate for charged particle beam lithography apparatus

In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

Charged particle beam lithography system and method for evaluating the same

A charged-particle beam lithography system is provided. A region to be patterned is divided into plural frames, a main deflection positions a beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of subfield. The deflection control portion draws a pattern in units of stripe including a first frame drawing region and a second frame drawing region. The first frame drawing region corresponds to one of the frames, and the second frame drawing region is a region moved by a distance C from the first frame drawing region toward a frame to be drawn next. The deflection control portion controls the driver to alternately pattern a first sub-field drawing region in the first frame drawing region and a second sub-field drawing region in the second frame drawing region. The distance C satisfies 0&#x3c;C&#x3c;Ws. Ws is a width of the subfield.

System and method for charged-particle beam lithography

A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

Method of calculating deflection aberration correcting voltage and charged particle beam writing method

A position measuring apparatus includes a holder having storage spaces in which a three-point support member for supporting a backside of a substrate being a mask at three points, and a vacuum chuck member for holding a backside of a substrate being a mask are prepared, a stage on which one of the three-point support member and the vacuum chuck member prepared in the storage spaces of the holder is mounted, a vacuum pump to hold and chuck the substrate through the vacuum chuck member in a state of being mounted on the stage, and a recognition unit to recognize a position of a pattern written on the substrate supported by the three-point support member mounted on the stage and a position of a pattern written on the substrate held by the vacuum chuck member on the stage.

Position measuring apparatus and positional deviation measuring method

A charged particle beam writing method includes measuring a topography of a backside of a substrate without an influence of a gravity sag, calculating a first positional deviation amount of a pattern written on a frontside of the substrate in a case of the backside of the substrate having been corrected to be flat, based on the the backside topography of the substrate, calculating a first coefficient of a first approximate expression indicating a positional deviation correction amount for correcting the first positional deviation amount, based on the first positional deviation amount, adding the first coefficient to a second coefficient of a second approximate expression indicating a positional deviation correction amount for correcting a second positional deviation amount of the pattern written on the frontside of the substrate in a case of the backside of the substrate having not been corrected to be flat, and writing the pattern on the frontside of the substrate utilizing a charged particle beam, based on one of a positional deviation correction amount obtained by a third approximate expression indicating a positional deviation correction amount using a third coefficient obtained as a result of the adding, and the positional deviation correction obtained by the second approximate expression.

Writing method and writing apparatus of charged particle beam, positional deviation measuring method, and position measuring apparatus

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Kanagawa, Japan

Shuichi Tamamushi