Panasonic Corporation

Toshiba Ceramics Co., Ltd.

Shuichi Takeda

Hiroyuki Yamada

Hidenobu Nishikawa

Atsunobu Iwamoto

Daido Komyoji

Yutaka Nakamura

Yuichiro Yamada

Yasumi Sasaki

Shigeru Kondou

Takeshi Inaba

Shigeo Kato

Atsuo Kitazawa

Masanori Sato

Yasuharu Kikuchi

Hiroaki Sato

Hiroyuki Homma

Yukio Ito

Memory card () includes at least semiconductor chip (), circuit board () with semiconductor chip () mounted on main surface (), having at least rigidity reducing portion () formed in main surface () or in a linear region of surface () opposite to the main surface, and cover portion () for covering semiconductor chip () on main surface () of circuit board (), wherein circuit board () has a plurality of convex regions () which flex in a convex shape toward main surface () due to rigidity reducing portion ().

Memory card

A memory card includes a circuit board, semiconductor chips mounted on different areas on the circuit board, a semiconductor chip with a semiconductor electrode on its top face and being fixed such that at least a part of its bottom face faces at least a part of a top face of the semiconductor chip, a wire for connecting the semiconductor electrode and a board electrode on the circuit board to achieve a mounting state of the semiconductor chip, and a cover for covering a circuit formation area from an upper side of the circuit board. The circuit formation area includes three semiconductor chips and the wire. At least a part of each of three semiconductor chips, at least a part of the circuit board, and the wire are covered with secondary sealing resin and primary sealing resin.

Memory card and method for manufacturing the same

Memory card includes a circuit board, a component mounted on a main face of the circuit board, casing covering at least the main face of the circuit board and the component, and bittering agent retained in a roughened area provided on casing or an exposed part of the circuit board.

A memory card includes a circuit board, a first semiconductor chip mounted on the circuit board with a bump sandwiched between the first semiconductor chip and the circuit board, a second semiconductor chip mounted on the circuit board with a bump sandwiched between the second semiconductor chip and the circuit board with a clearance not greater than 1 mm between the first semiconductor chip and the second semiconductor chip, a first sealing resin layer surrounding the bump and existing between the first semiconductor chip and the circuit board, and a second sealing resin layer surrounding the bump and existing between the second semiconductor chip and the circuit board, and a cover covering the first semiconductor chip, the second semiconductor chip on a principal face of the circuit board.

Memory card and method for manufacturing memory card

A memory card includes a first circuit board, a first semiconductor chip mounted to a top face of the first circuit board with a part of its under face confronting the first circuit board, a second circuit board of which a top face is bonded to a under face of the first circuit board, a second semiconductor chip mounted to the top face of the second circuit board with at least a part of the second semiconductor chip confronting a part of another part other than the part of the under face of the first semiconductor chip, and a cover disposed over the top face of the second circuit board for covering the first semiconductor chip, the first circuit board and the second semiconductor chip.

Memory card and memory card manufacturing method

The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r&equals;&bgr;(220)/&bgr;(111) of &bgr; (220) peak to &bgr; (111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and the layer A is laid on either side in the thickness direction.

CVD-SiC self-supporting membrane structure and method for manufacturing the same

A vertical wafer boat in which a ceramic film is prevented from being peeled off and which has a long useful life is provided. Front and rear sets each consisting of two support rods 4 which are bilaterally symmetrically arranged are respectively disposed in front and rear sides between upper and lower plates 1 and 2. A number of wafer mount groove portions 3 are formed in the support rods. The plates and the support rods are made of a ceramic base material, and the surfaces are covered by a high-purity ceramic film. At least wafer mount groove portions of front right and left support rods of the front set are located in front of a center line which is perpendicular to an insertion direction of semiconductor wafers which are to be mounted on the wafer mount groove portions. Horizontal sections of the wafer mount groove portions of the support rods have a polygonal shape which does not have an acute angle of 90.degree. or less.

Vertical wafer boat

A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

Growing community of inventors

Yamagata, Japan

Shuichi Takeda