Nec Corporation

Juki Corporation

Takenaka Corporation

Shuichi Saito

Shigemi Yamamoto

Hiromu Kitamura

Kazuyoshi Ueno

Seiichi Shishiguchi

Yuuko Takemoto

Akira Mineji

Hidekazu Okabayashi

Kousuke Miyoshi

Masahiro Hioki

Sanae Mori

Naoharu Nishio

Akiko Fujii

Mizuhiko Tamura

Genta Shimizu

Yuko Watabe

Toshiya Hayashi

Kanji Matsushita

Kouji Hamada

A sewing apparatus, includes a display input unit including a display unit configured to display an image of an input screen, and an input detection unit configured to detect an input operation on the input screen; and a control apparatus that performs display control of the display unit in response to the input operation. The control apparatus performs display control in which a background of the input screen is set to a dark color as a whole, a sewing pattern image displayed on the input screen is set to brightness higher than that of the background, and an operation unit that receives the input operation on the input screen is set to a color lighter than that of the background.

Sewing apparatus

A control information management apparatus, includes: a control information storage unit that stores a path(s) in association with an item(s) of control information that is set in a switch(es) by a control apparatus for controlling the switch(es) in a centralized manner; a search condition reception unit that receives information about a path associated with the item(s) of control information as a search condition for the item(s) of control information; a control information search unit that searches the control information storage unit for the item(s) of control information associated with the path that matches the search condition; and a search result output unit that outputs the item(s) of control information searched by the control information search unit.

Control information management apparatus, control information presentation method, and program

An interface control system of network equipment, includes: a logical interface which is an interface of a logical group; physical ports which belong to the logical group; and an interface control section configured to incorporate the logical interface and the physical ports as management objects into a management interface when validation of a predetermined function has been performed to each of the logical interface and the physical ports.

Interface control system and interface control method

Sewing machine

A prefixed advertisement structure which is positioned mainly in downtown areas or places of heavy traffic, belonging to the field of advertisement making effective use of the wall surfaces of a building () conspicuous to passersby, etc. and which, in particular, is integrated with a glass sash wall () of a building (). A prefixed advertisement structure integrated with a glass sash wall () of a building (), wherein a advertising site is secured in advance on wall surface of the building in consideration of harmony with the external design of the building (), providing a source of income from advertisement from the time of completion of the building () with an advertising medium attached in advance, and the advertisement structure harmonized with the external design of the building prevents the external appearance of the building () from being spoiled and attracts people's attention, thus proving increased advertising effects.

Prefixed advertisement structure integrated with glass sash wall of building

In a portable telephone including a plurality of input buttonsfor inputting various indications, light emitting elementswhich emit a light, when any one of the input buttonsis pushed on, diffuserswhich are located under a plurality of input buttonsand which diffuse the light emitted from the light emitting element, the diffuserhas an incidence portionwhich has a receiving plane positioned near the light emitting elementsand receiving the light emitted from the light emitting elements, and a projecting portionwhich has a reflecting plane for reflecting the light received by the incidence portionto an upper side of a plurality of input buttons

Portable telephone, diffuser and lighting device provided therein

A key button switch structure for use in a handheld mobile phone, comprises an input buttonhaving a push-down pressure transmitting projection Aand a button inclination preventing projection Bboth projected from a bottom surface of the input button, integrally with the input button. Two electrodes Aand Bare formed on a substratefixed to a body casingA dome-like switch contactis provided to be pushed down by the push-down pressure transmitting projection Aof the input button when the input button is depressed, thereby to electrically contact both the two electrodes. Thus, since the button inclination preventing projection Bis provided, even in the case that an action center line of the dome-like switch contact is not coincident with an input pressure center line of the input button, when the input button is depressed, the electrodes Aand Bformed on the substrateare surely electrically interconnected by the dome-like switch contact effectively uniformly collapsed by the push-down pressure transmitting projection Aof the input button.

Key button structure for handheld mobile phone and its similar instrument, and method for forming the same

The present invention relates to a copper interconnection comprising a copper or copper alloy layer, wherein at least 50% of crystal grains of copper or a copper alloy form twins. A copper interconnection of the present invention is, therefore, highly reliable, and, a production cost thereof is low.

Copper interconnection

Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000&deg; C. to 1,200&deg; C. at a ramp-up rate of at least 200&deg; C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Thermal processing of semiconductor devices

A fabrication method of a semiconductor device is provided, which makes it possible to form shallow extensions (e.g., 0.1 &mgr;m or less in depth) of source/drain regions of a MOSFET with a double drain structure. In the step (a), a gate electrode is formed over a main surface of a single-crystal Si substrate of a first conductivity type through a gate insulating film. In the step (b), a dopant of a second conductivity type is ion-implanted into the substrate at an acceleration energy of 1 keV or lower under a condition that the amount of point defects induced in this step (b) is minimized or decreased, thereby forming first and second doped regions of the second conductivity type. In the step (c), a pair of sidewalls spacers are formed. In the step (d), a dopant of the second conductivity type is ion-implanted into the substrate, thereby forming third and fourth doped regions of the second conductivity type having a depth greater than the first and second doped regions and a lower dopant concentration than the first and second doped regions to be overlapped therewith. In the step (e), the substrate is subjected to an annealing process, thereby constituting one of a pair of source/drain regions with a double drain structure by the first and third doped regions and the other thereof by the second and fourth doped regions.

Fabrication method of semiconductor device using ion implantation

The invention provides a method of fabricating a semiconductor device, including the steps of (a) depositing a titanium film over a silicon substrate, (b) depositing an amorphous silicon film on the titanium film, (c) carrying out first thermal annealing to form a first TiSi.sub.2 film over a resultant, (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed, (e) successively removing the amorphous silicon film and the first TiSi.sub.2 film, and (f) forming a highly concentrated diffusion layer in the region, the diffusion layer having conductivity opposite to that of the silicon substrate. In accordance with the method, it is possible to form a salicided MOS transistor which includes a source/drain diffusion layer having shallow junction depth, and low-resistive source/drain regions.

Method of fabricating semiconductor device

A method of manufacturing a semiconductor device in which a first ion implantation is carried out into a semiconductor substrate. Then, a second ion implantation is carried out to a projection range deeper than that of the first ion implantation. The ions of the second implantation are formed from the same type of atoms constituting the semiconductor substrate or from impurity atoms having the same conduction type as the semiconductor substrate at the projection range of the second ion implantation. A further ion implantation may be carried out to electrically shield the second implantation, or the method may be carried out in a SOI substrate with the second implantation extending through the insulating layer of the SOI structure.

Method of manufacturing semiconductor device with shallow impurity layers

Method of fabricating semiconductor device having a salicide structure

In a router device of the present invention, the routing controller refers to the routing address table to determine whether the received frame is to be routed (whether the frame passes through two or more router devices, for example). The multiplication controller multiplies the frame selected as the subject of routing and has the path controller set paths between router devices for transmission of the multiplied frames. The frame for which a path is set is transmitted with the destination address of the router device as the other party of communication. When a multiplied frame is received, the multiplication controller extracts an ordinary frame from the multiplied frame and sends it to the device indicated by the original destination address.

Growing community of inventors

Tokyo, Japan

Shuichi Saito