Sanken Electric Co., Ltd.

Shuichi Okubo

Hiromichi Kumakura

Hiroko Kawaguchi

Toru Yoshie

A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes: a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; and a highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region; and an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region.

Growing community of inventors

Niiza, Japan

Shuichi Okubo