Kioxia Corporation

Shuichi Kuboi

Junji Kataoka

Seiya Yoshinaga

A plasma etching method in an embodiment includes etching a silicon-containing film by using plasma of a hydrofluorocarbon gas. The hydrofluorocarbon gas contains, as a conjugated cyclic compound, hydrofluorocarbon having a composition represented by CHF, where x, y, and z are positive integers satisfying x≥6 and (z−y)/x≤1).

Plasma etching method and plasma etching apparatus

A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CF, wherein x and y are numbers satisfying x&#x2265;7 and y&#x2265;x, and includes a benzene ring structure composed of six carbon atoms.

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Yokohama, Japan

Shuichi Kuboi