Mitsubishi Electric Corporation

Onkyo Corporation

Shuichi Hiza

Eiji Yagyu

Kunihiko Nishimura

Masahiro Fujikawa

Yuki Takiguchi

Keisuke Nakamura

Motohiro Sato

Kenji Mimura

Sadatoshi Hisamoto

Tomohiro Shinagawa

Norio Umezu

Yoshitaka Handa

Kazutaka Murayama

Takashi Kawana

Fumihiko Hosokoshi

A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.

Semiconductor device including stop islands and method for manufacturing semiconductor device

A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the first and second graphene layers are provided as an interface layer between the diamond substrate and the nitride semiconductor layer.

Nitride semiconductor device, and method of manufacturing nitride semiconductor device

Removal of substrates in a composite substrate is facilitated, and flaking of the composite substrate in an unintended process is prevented. A method for manufacturing a composite substrate includes: forming a first bonding material in a first surface of a first substrate; forming, in the first surface, at least one groove located more inward than a periphery in a plan view of the first substrate; forming the first bonding material along an inner wall of the at least one groove, the first bonding material not filling into space enclosed by the inner wall of the at least one groove; forming a second bonding material on a second surface of a second substrate; and bonding the first bonding material and the second bonding material together in a region except the at least one groove.

Method for manufacturing composite substrate, and composite substrate

The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (f) bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer.

Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate

An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.

Method of manufacturing semiconductor element

An insulating molded body to be used for an arc extinguishing device of a gas circuit breaker is provided. The insulating molded body includes a fluororesin mixture which contains a fluororesin and an oxygen generator configured to generate oxygen through thermal decomposition at 450&#xb0; C. or more and 1,150&#xb0; C. or less with an arc generated when a conduction current is interrupted. The oxygen generator is dispersed in the fluororesin. Also provided is a gas circuit breaker including an insulating nozzle formed of the insulating molded body.

Insulating molded body and gas circuit breaker

A pulse width modulation circuit of the present invention includes: pulse generation means being provided with a first power supply and charged with a first current and a second current between which a constant current is distributed to turn ON/OFF a switching element, thereby generating a pulse from a first output section; pulse modulation means for controlling the charging while controlling a distribution ratio between the first current and the second current based on an input signal, thereby changing a pulse width of the output pulse; and first short circuit means for shorting the first output section with the first power supply when the pulse being output from the first output section transitions to a voltage of the first power supply.

Growing community of inventors

Tokyo, Japan

Shuichi Hiza