United Microelectronics Corp.

Shui-Yen Lu

Jhen-Cyuan Li

Po-Wen Su

Jiunn-Hsiung Liao

Ming-Hua Chang

Shin-Chi Chen

Yi-Po Lin

Yu-Cheng Tung

Yu-Ren Wang

Chieh-Te Chen

Neng-Hui Yang

Yen-Liang Wu

Chueh-Yang Liu

Yu-Ying Lin

I-Cheng Hu

Nan-Yuan Huang

Shang-Yuan Tsai

Yu Shu Lin

Kuan Hsuan Ku

Chun Yao Yang

Jian-Wei Chen

Feng-Yi Chang

Chung-Fu Chang

Chiu-Hsien Yeh

Hsiao-Pang Chou

Chih-Yueh Li

Chi-Horn Pai

Yuan-Chi Pai

Shao-Hua Hsu

Man-Ling Lu

Zhen Wu

Li-Chiang Chen

Ching-Pin Hsu

Chih-Wen Feng

Chih-Ho Wang

Teng-Chun Tsai

Chien-Ting Lin

Chun-Hsien Lin

Chan-Lon Yang

Shih-Fang Tzou

Chi-Mao Hsu

Chen-Ming Huang

Nien-Ting Ho

Shih-Chieh Hsu

Pei-Yu Chou

Po-Cheng Huang

Yi-Wen Chen

Chun-Tsen Lu

Po-Jui Liao

Zen-Jay Tsai

Kuan-Ying Lai

Hung-Yi Wu

Tsung-Wen Chen

Tsung-Lung Tsai

Wen-Yen Huang

Cheng-Chang Wu

Ying-Hung Chou

Hsin-Yu Hsieh

Ching-Fang Chu

Zhi-Jian Wang

Fong-Lung Chuang

Shih-Hao Su

Guang-Wei Ye

Chih-Jung Su

Yu-Hong Kuo

Tzung-I Tsai

A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, ridges extending along a first direction on the buffer layer, gaps extending along the first direction between the ridges, a p-type semiconductor layer extending along a second direction on the ridges and inserted into the gaps, and a source electrode and a drain electrode adjacent to two sides of the p-type semiconductor layer. Preferably, the source electrode and the drain electrode are extending along the second direction and directly on top of the ridges.

High electron mobility transistor and method for fabricating the same

A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer, using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer, forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

A semiconductor device includes a metal gate on a substrate, in which the metal gate includes a first work function metal (WFM) layer and the first WFM layer further includes a first vertical portion, a second vertical portion, wherein the first vertical portion and the second vertical portion comprise different heights, and a first horizontal portion connecting the first vertical portion and the second vertical portion.

Semiconductor device having asymmetric work function metal layer

A method of fabricating a semiconductor device is disclosed. A substrate is provided. A dummy gate stack is formed on the substrate. The dummy gate stack includes a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer. The amorphous silicon dummy gate is transformed into a nano-crystalline silicon dummy gate. A spacer is formed on a sidewall of the nano-crystalline silicon dummy gate. A source/drain region is formed in the substrate on either side of the dummy gate stack.

Method of fabricating a semiconductor device

A non-planar transistor is provided. It includes a substrate, a fin structure, a gate structure, a first spacer structure and a source/drain region. The fin structure is disposed on the substrate, the gate structure is disposed on the fin structure. The fin structure includes an upper portion, a concave portion and a lower portion, and the concave portion is disposed between the upper portion and the lower portion. The first spacer structure is disposed on a sidewall of the gate structure. The first spacer structure includes a first spacer and a second spacer, wherein the first spacer is disposed between the second spacer, and a height of the first spacer is different from a height of the second spacer. The source/drain region is disposed in a semiconductor layer at two sides of the first spacer structure.

Non-planar transistor

A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.

Field-effect transistor

A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.

Method of forming semiconductor device

An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in a trench shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Fin field-effect transistor

A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.

Field-effect transistor and method of making the same

A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

Semiconductor device and method of forming the same

A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.

Semiconductor device and method for fabricating the same

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Tainan, Taiwan

Shui-Yen Lu