University of Arkansas

Other

Shui-Qing Yu

Zhong Yu Chen

H Alan Mantooth

Gregory J Salamo

Yang Zhang

Rahul Kumar

Samir M El-Ghazaly

Samir K Saha

Andrea Wallace

Wei Du

Syam Madhusoodhanan

Yiyin Zhou

An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.

Apparatus for integrated microwave photonics on a sapphire platform, method of forming same, and applications of same

A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.

SiGeSn laser diodes and method of fabricating same

A high temperature optoelectronic isolator for power electronics operating above 250 degrees Celcius.

High temperature optoelectronic devices for power electronics

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Fayetteville, AR, United States of America

Shui-Qing Yu