Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC China Company Limited

Shui Liang Chen

Lianjie Li

YanBin Lu

Jian-Hua Lu

Feng Han

An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.

Growing community of inventors

Hsinchu, Taiwan

Shui Liang Chen