Agency for Science, Technology and Research

Shuhui Yu

Kui Yao

Francis Eng Hock Tay

Thin films of ferroelectric material with a high mole fraction of Pb(AB)Osubstantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(AB)Oin the ferroelectric material is &#x3e;0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A, and B; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

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Singapore, Singapore

Shuhui Yu