Alpha and Omega Semiconductor International LP

Shannon Systems Ltd.

Shuhua Zhou

Jun Lu

Long-Ching Wang

Madhur Bobde

Kai Chen

Lin Lv

A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 μm to 35 μm. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/° C. A glass transition temperature of the compound layer is larger than 150° C. The plurality of metal layers comprises a first titanium layer, a first nickel layer, a silver layer, a second nickel layer, and a metallic layer. In a first example, the metallic layer is a second titanium layer. In a second example, the metallic layer is a Titanium Nitride (TiN) layer.

Chip scale package (CSP) semiconductor device having thin substrate

A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of providing a device wafer; providing a supporting wafer; attaching the supporting wafer to the device wafer via an adhesive layer; and applying a singulaton process so as to form a plurality of semiconductor packages.

Semiconductor package having thin substrate and method of making the same

A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of providing a device wafer; providing a supporting wafer; attaching the supporting wafer to the device wafer via an adhesive layer; and applying a singulation process so as to form a plurality of semiconductor packages.

Voltage regulation techniques for providing stable power to the components mounted on an electronic device circuit board are presented. In addition to a first component and a second component, a voltage converter and a power line are provided on the electronic device circuit board. The voltage converter converts an external voltage to an internal voltage that is conveyed through the power line. The first component is coupled to the power line to get power via a first power supply point on the power line. The second component is coupled to the power line to get power via a second power supply point on the power line. A first feedback terminal is provided on the power line between the first power supply terminal and the second power supply terminal. The voltage converter regulates the internal voltage based on a voltage value retrieved from the first feedback terminal.

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Shanghai, China

Shuhua Zhou