Toshiba Tec Kabushiki Kaisha

Mitsubishi Electric Corporation

Semiconductor Energy Laboratory Co., Ltd.

Riso Technologies Corporation

Shuhei Yokoyama

Ryutaro Kusunoki

Ryuichi Arai

Chiaki Tanuma

Toshinari Sasaki

Shogo Shibata

Takashi Hamochi

Satoshi Kaiho

Kenichi Okazaki

Maki Hasegawa

Shigeru Mori

Meng Fei Wong

Ikuo Fujisawa

Hiroyuki Nakamura

Toru Iwagami

Naoki Ikeda

Seiya Shimizu

Yasuharu Hosaka

Shunpei Yamazaki

Yusuke Nonaka

Hisashi Kawafuji

Toshimitsu Obonai

Atsushi Kubota

Masaaki Higuchi

Koichiro Noguchi

Hiroyuki Kushida

Kazuki Koda

Takaya Kitawaki

Keitaro Ichikawa

Hiroshi Kanemura

Kosuke Yamaguchi

Seiya Sugimachi

Mengfei Wong

Hiroshi Yamamoto

Masayuki Satomi

A semiconductor device includes: semiconductor elements; a package sealing the semiconductor elements and being rectangular in a top view; control terminals protruding from a first side of the package; output terminals protruding from a second side facing the first side of the package; and a recessed portion formed in a third side adjacent to the first side and the second side of the package, wherein a part of the control terminals is disposed at end portions of lead frames, the semiconductor device further includes dummy terminals disposed at other end portions of the lead frames, respectively, the dummy terminals protruding from the recessed portion, and an amount of the protrusion of each of the dummy terminals from the recessed portion is smaller than or equal to 0.75 mm.

Semiconductor device

A semiconductor device includes: a semiconductor element; a mold member covering the semiconductor element; and a first terminal and a second terminal electrically connected to the semiconductor element, protruding from one side of the mold member, and alternating along the one side. The first terminal includes a first bend, and the second terminal includes: a second bend located further from the one side of the mold member than the first bend, and having the same width as the first bend in plan view.

Semiconductor device with bent terminals

The plurality of control terminals are drawn out from the first side surface of the sealing resin. The plurality of main terminals are drawn out from the second side surface of the sealing resin. Each of the main terminals includes, in the sealing resin, a bonding section wire-connected to one of the semiconductor chips, a heat transfer section adjacent to the bonding section, and a mounting section on which the other one of the semiconductor chips is mounted. A concave section is provided on the second side surface between the main terminals adjacent to each other. A side surface of the heat transfer section is opposed to the concave section. A side surface of the bonding section is not opposed to the concave section.

Semiconductor device and power conversion device

In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cmand lower than or equal to 0.5 W/cmis supplied to an electrode provided in the treatment chamber.

Insulating film, method for manufacturing semiconductor device, and semiconductor device

A manufacturing method of a semiconductor device according to the technology disclosed in the present specification includes: providing at least one semiconductor element; connecting, to the semiconductor element, a plurality of first terminals and at least one second terminal that is a control terminal to which a voltage lower than that of the first terminal is applied; and forming a first bent part in the first terminal, in which the first bent part does not protrude on the surfaces, facing each other, of the plurality of first terminals that are adjacent to each other.

Manufacturing method of semiconductor device and semiconductor device

A droplet dispensing apparatus includes a crystal sensor, a resonance frequency measuring unit, and a controller. The controller is configured to obtain the resonance frequency of the crystal sensor before droplets are discharged from a liquid dropping device, control the liquid dropping device to discharge droplets on to the crystal sensor, and obtain the resonance frequency of the crystal sensor after droplets are discharged from the liquid dropping device. The controller estimates a volatilization amount for the droplets on the crystal sensor based on a temporal change trend in the resonance frequency of the crystal sensor and calculates the total weight of the droplets discharged from the liquid dropping device based on the difference in resonance frequency of the crystal sensor before and after the droplets are discharged and the estimated volatilization amount.

Droplet dispensing apparatus

According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.

Method of manufacturing semiconductor device and semiconductor device

A liquid discharging device to be used with a liquid dispensing apparatus includes a discharging portion configured to discharge a liquid based on a control signal from the liquid dispensing apparatus on which the liquid discharging device is mounted, and a sheet material having a characteristic configured to be changed by the liquid dispensing apparatus after a discharge of the liquid by the discharging portion.

Chemical liquid dispensing apparatus and chemical liquid discharging device

In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180&#xb0; C. and lower than or equal to 260&#xb0; C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cmand lower than or equal to 0.5 W/cmis supplied to an electrode provided in the treatment chamber.

A liquid dispensing apparatus includes a mounting unit on which a liquid discharging device is mounted, a driving circuit to supply driving voltages to an actuator of the liquid discharging device mounted on the mounting unit, a capacitance measuring circuit configured to measure a capacitance value of the actuator and a controller configured to acquire the capacitance value, compare the capacitance value to a predetermined threshold value, and determine whether to supply a first control signal to the driving circuit to drive the actuator of the liquid discharging device to discharge a liquid based on the comparison of the capacitance value to the predetermined threshold value.

Liquid dispensing apparatus

A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Method for manufacturing semiconductor device and semiconductor device

A semiconductor module includes: a semiconductor element; a first lead frame including a first portion on which the semiconductor element is mounted; a sealing member sealing the semiconductor element and the first portion; and a heat dissipation member which is integrated with the sealing member and dissipates heat generated in the semiconductor element. The heat dissipation member is insulated from the semiconductor element and the first portion by the sealing member. Therefore, the semiconductor module that is applicable to vertical semiconductor elements and ensures electrical insulation between the semiconductor element and the heat dissipation member when implementing the semiconductor module onto a circuit board, can be provided.

Semiconductor module and semiconductor device

Growing community of inventors

Shizuoka, Japan

Shuhei Yokoyama