Sharp Kabushiki Kaisha Corporation

Other

Semiconductor Energy Laboratory Co., Ltd.

501 Sharp Kabushiki Kaisha

Michitada Morisue

Shuhei Tsuchimoto

Shoei Kataoka

Ryusuke Kita

Hideo Nojima

Atsushi Yoshinouchi

Masaya Nagata

Masataka Itoh

Satoshi Nishigaki

Tatsuo Morita

Hidetaka Shintaku

Nobuo Hashizume

Eiji Imada

Eizo Ohno

Hiroshi Sugimura

Satoshi Katayama

Yoshihide Shimoda

Susumu Saitoh

Mitsuhiko Yoshikawa

Takashi Nukii

Tomohisa Komoda

Yoko Katsuya

Keiji Tarui

Soji Ohhara

Mamoru Ishizuka

Yoshihumi Yaoi

Koichiro Tanaka

Hideto Ohnuma

Masanori Watanabe

Naoki Makita

Chiho Kokubo

Hiroshi Wada

Yasuhiko Inami

Masaya Hijikigawa

Masayoshi Koba

Kiyoshi Ogata

Masayuki Katagiri

Hirohisa Tanaka

Yoshimi Kojima

Katsushi Okibayashi

Shinji Toyoyama

Hiroya Kirimura

Makoto Kurokawa

Akiteru Rai

Masaru Iwasaki

Kazutaka Uda

Yasuaki Murata

Shoei Katoaka

Shoei Katoka

Hiroya Sato

Yuzi Matsuda

In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.

Semiconductor device and manufacturing method thereof

A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.

Method of manufacturing a crystalline silicon base semiconductor thin film

A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.

Method for producing a thin film semiconductor device

Thin film transistor device with advanced characteristics by improved

A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.

Apparatus and a method for inputting/outputting an image

A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.

Method of producing a polycrystalline semiconductor film without

An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

Ion implantation apparatus

A logic circuit device includes a superconductive body formed of a ceramic superconductive material. The ceramic superconductive material has random grain boundaries which act as weak couplings. The ceramic superconductive material also has a magneto-resistive property. There is at least one conductor arranged near the ceramic superconductive body in order to exert a magnetic field on the ceramic superconductive body. The ceramic superconductive body changes its resistance in response to the magnetic field generated by the conductor. The ceramic superconductive body can be used as part of a logic circuit.

Superconductive logic device

A superconductinve magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Superconductive magnetic sensor having self induced magnetic biasing

A superconductive magneto-resistive device includes superconductive ceramic films having a magneto-resistive effect. In the superconductive magneto-resistive device, the superconductive ceramic films are laminated one by one, and the adjacent superconductive ceramic films are insulated by each electrical insulation film, respectively, except for one portion of each of the adjacent superconductive ceramic films, resulting in that the superconductive ceramic films are connected in series. Furthermore, a pair of electrodes is arranged on the upper-most and lower-most superconductive ceramic films.

Superconductive magneto-resistive device comprising laminated

A superconductive apparatus has a superconductive device such as a superconductive magneto-resistive device. The superconductive device is mounted within an airtight package which is sealed to create an airtight state. Before sealing, the airtight package is evacuated to replace the internal air thereof with an inert gas.

Superconductive apparatus having a superconductive device in a airtight

An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the super conductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Apparatus for observing a superconductive phenomenon in a superconductor

A contact type image sensor includes a light source for illuminating an original to be read and a substrate in which an optical fiber array member is assembled. The substrate is disposed such that one end of the optical fiber array member faces the original for transmitting a reflected light from the illuminated original therethrough. The contact type image sensor further includes a light detecting element array formed on the substrate and facing the other end of the optical fiber array member for receiving the transmitted light and converting the received light to an electrical signal. The contact type image sensor also includes a driving circuit disposed on the substrate and electrically connected to the light detecting element array for driving the light detecting element array.

Contact type image sensor

An apparatus for magnetic measurement using superconductive magneto-resistive film which is disposed in a magnetic field with the surface of the superconductive magneto-resistive film directed in parallel with the direction of the magnetic field so that the magnetic hysterisis property of the film can be avoided and the accuracy of the measurement can be much improved.

Method of eliminating the effect of hysteresis in a superconductive

A superconductive magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Superconductive magneto-resistive device for sensing an external

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Nara, Japan

Shuhei Tsuchimoto