Fujimi Incorporated

Semiconductor Energy Laboratory Co., Ltd.

Shuhei Takahashi

Kohsuke Tsuchiya

Kazuko Ikeda

Masatoshi Tomatsu

Masayuki Sakakura

Tomoya Futamura

Yoshio Mori

Shunpei Yamazaki

Yasuyuki Arai

Yoshifumi Tanada

Yukie Suzuki

Yoshitaka Moriya

Hitoshi Morinaga

Shinichiro Takami

Tomohiro Imao

Maki Asada

Toshio Shinoda

Shogaku Ide

Yutaka Inoue

Kayoko Nagahara

Toshihiro Miwa

Noboru Yasufuku

Naoyuki Ishihara

The present invention provides a polishing composition for use in polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing composition has an oxidation-reduction potential ORPmV and the material to be polishing has an oxidation-reduction potential ORPmV, with their relation satisfying ORP&#x2212;ORP&#x2265;100 mV.

Polishing composition

Provided is a method for polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing method comprises a step of carrying out preliminary polishing using a preliminary polishing composition that comprises an abrasive Aand a step of carrying out final polishing using a final polishing composition that comprises an abrasive Alower in hardness than the abrasive A.

Polishing method and polishing composition

Provided is a polishing composition capable of keeping a good polishing removal rate stably. The polishing composition includes silica particles as abrasives and a basic compound as a polishing removal accelerator. The silica particles have a density of silanol groups that is 1.5 to 6.0 pieces/nm. The polishing composition has an adsorption ratio parameter A that is 1.2 or less, the adsorption ratio parameter representing concentration dependency of an amount of adsorption of the basic compound to the silica particles as the ratio of high-concentration adsorption amount/low-concentration adsorption amount.

The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least &#x2212;100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.

Abrasive composition and method for producing semiconductor substrate

Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate.

Composition for polishing purposes, polishing method using same, and method for producing substrate

A polishing composition includes a water-soluble polymer having a weight average molecular weight of 1000000 or less and a molecular weight distribution represented by weight average molecular weight (Mw)/number average molecular weight (Mn) that is less than 5.0. The polishing composition is mainly used in an application for polishing a substrate, preferably in an application for performing final polishing on a substrate.

Polishing composition and method for producing substrate

A polishing composition is composed of a filtered diluted liquid obtained through an undiluted liquid-preparing step, an undiluted liquid-filtering step, a diluting step, and a diluted liquid-filtering step. In the undiluted liquid-preparing step, an undiluted liquid is prepared by mixing raw materials for the polishing composition. In the undiluted liquid-filtering step, the undiluted liquid is filtered. In the diluting step, the filtered undiluted liquid is diluted to obtain a diluted liquid. In the diluted liquid-filtering step, the diluted liquid is filtered. The polishing composition is used, for example, for polishing a silicon substrate material to produce a silicon substrate.

Polishing composition, manufacturing process therefor, process for production of silicon substrate, and silicon substrate

Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

Composition for polishing and method of polishing semiconductor substrate using same

A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass.

Surface treatment composition and surface treatment method using same

The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

Semiconductor device and manufacturing method thereof

A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.

Composition for polishing and composition for rinsing

A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.

Light emitting device and manufacturing method thereof

To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. A wetting agent for semiconductors, comprising a water soluble polymer compound having a low viscosity and water, and a polishing composition. A 0.3 wt % aqueous solution of the water soluble polymer compound has a viscosity of less than 10 mPa&#xb7;s at 25&#xb0; C.

Wetting agent for semiconductors, and polishing composition and polishing method employing it

A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. The structure of the light emitting device and its manufacturing method reduces the amount of water remaining in the light emitting device and suppresses the deterioration of the light emitting element due to water remaining in the light emitting device.

Growing community of inventors

Kiyosu, Japan

Shuhei Takahashi