Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Shuhei Saido

Hidenari Yoshida

Takatomo Yamaguchi

Yusaku Okajima

Takafumi Sasaki

Hitoshi Murata

Yuichi Wada

Takashi Yahata

Tomoshi Taniyama

Tetsuya Kosugi

Takayuki Nakada

Hiroaki Hiramatsu

Daisuke Hara

Akihiro Sato

Hidetoshi Mimura

Kenji Shirako

Takuro Ushida

Mika Urushihara

Shinya Morita

Tsukasa Kamakura

Kenji Kameda

Takeo Hanashima

Daigi Kamimura

Koei Kuribayashi

Akinori Tanaka

Shinya Ebata

Hironori Shimada

Mitsunori Ishisaka

Masanao Fukuda

Tomoyuki Matsuda

Sadao Hisakado

Mitsunori Takeshita

Hiroto Yamagishi

Shigeo Nakada

Takeshi Itoh

Kenta Kasamatsu

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

Substrate processing apparatus, heat insulator assembly and method of manufacturing semiconductor device

According to the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube accommodating therein a plurality of substrates vertically arranged; and a first heater configured to heat an inside of the reaction tube from an upper portion of the reaction tube, wherein a heat generating amount of the first heater in a region corresponding to a low temperature portion of an upper substrate among the plurality of the substrates accommodated in the reaction tube is greater than a heat generating amount of the first heater in a region corresponding to a high temperature portion of the upper substrate.

Substrate processing apparatus and ceiling heater

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Substrate processing apparatus and method of manufacturing semiconductor device

According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device

Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Substrate processing apparatus

A substrate processing apparatus for preventing adhesion of by-products to an inner surface of a furnace opening is disclosed. An apparatus is provided with: a process chamber, a substrate holder, a process gas supplier that supplies a process gas into the process chamber, a first heater that is installed outside the process chamber and heats an inside of the process chamber, a heat insulator that is installed between a lid of the process chamber and the substrate holder, a second heater that is installed near the substrate holder in the heat insulator and heats the inside of the process chamber, a third heater that is installed near an end closer to the lid in the process chamber and heats the end, and a supplier that supplies a purge gas to purge around the second and third heaters into the heat insulator.

Substrate processing apparatus and heater device

Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Substrate processing apparatus, heater and method of manufacturing semiconductor device

Described herein is a technique capable of suppressing adhesion of by-products to a furnace opening portion. A substrate processing apparatus includes: a reaction vessel having an opening at a lower end and accommodating a substrate retainer; a shaft rotatably supporting the substrate retainer; a cap including: a side surface portion having a predetermined gap with an inner surface of the reaction vessel; a cylindrical portion through which the shaft is inserted; an upper plate portion of an annular shape; and a flange connected to a lower end of the side surface portion; and a cap cover connected to the shaft above the upper end of the cylindrical portion. A purge gas from thereunder flows sequentially to a space between the shaft and the cylindrical portion, a space between the upper plate portion and the cap cover and a space between the side surface portion and the cap cover.

Growing community of inventors

Toyama, Japan

Shuhei Saido