Toyota Jidosha Kabushiki Kaisha

Shuhei Oki

Satoru Kameyama

Shinya Iwasaki

Tsuyoshi Nishiwaki

Masaru Senoo

Takahiro Ito

Toru Onishi

Atsushi Imai

Hiroshi Hosokawa

Tomoharu Ikeda

Yuki Horiuchi

Kunihito Kato

Rahman Md Tasbir

Masaki Ajioka

Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.

Semiconductor device with a gate electrode positioned in a semiconductor substrate

A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range; implanting n-type impurities into the first range from the first surface so as to make a region amorphous, the region being in the first range and disposed at the first surface; irradiating the first surface with first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range; and crystallizing the region which has been made amorphous in or after the irradiation of the first laser.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes a semiconductor region forming process, a cleaning process, a surface roughness uniformizing process, and an electrode forming process. As the semiconductor region forming process, semiconductor regions are formed such that a plurality of semiconductor regions with different ion injection amounts are exposed on one principal surface of a semiconductor substrate. As the cleaning process, after the semiconductor region forming process, a cleaning using hydrofluoric acid is performed on the one principal surface of the semiconductor substrate. As the surface roughness uniformizing process, after the cleaning process, the surface roughness of the one principal surface of the semiconductor substrate is uniformized. As the electrode forming process, after the surface roughness uniformizing process, electrodes are formed on the one principal surface of the semiconductor substrate.

A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N, a local minimum value N, a local maximum value N, and a density Nare formed in this order from front surface side, a relationship of N&#x3e;N&#x3e;N&#x3e;Nis satisfied, a relationship of N/10&#x3e;Nis satisfied, and a distance 'a' from the surface to the depth having the local maximum value Nis larger than twice a distance 'b' from the depth having the local maximum value Nto the depth having the local minimum N

Semiconductor device and method for manufacturing semiconductor device

A manufacturing method for a semiconductor device including a drift layer; a body layer contacting a front surface of the drift layer; an emitter layer provided on a portion of a front surface of the body layer and exposed on the front surface of the substrate; a buffer layer contacting a back surface of the drift layer; a collector layer contacting a back surface of the buffer layer and exposed on a back surface of the substrate; and a gate electrode facing, via an insulator, the body layer in an area where the body layer separates the emitter layer from the drift layer, includes preparing a wafer that includes a first layer, and a second layer layered on a back surface of the first layer and having a higher polycrystalline silicon concentration than the first layer, and forming the buffer layer by implanting and diffusing ions in the second layer.

Semiconductor device and manufacturing method of same

A method includes: forming a front surface structure of a semiconductor element on a front surface side of a semiconductor substrate; forming crystal defects in the semiconductor substrate by implanting charged particles into the semiconductor substrate; subjecting the semiconductor substrate to a heat treatment after having formed the crystal defects; attaching a supporting plate on the front surface side of the semiconductor substrate after the heat treatment; thinning the semiconductor substrate by grinding a back surface side of the semiconductor substrate to which the supporting plate has been attached; and forming a back surface structure of the semiconductor element on a back surface of the thinned semiconductor substrate.

Method for manufacturing semiconductor device

A technology for reducing contact resistance between a semiconductor substrate and an electrode is provided. A provided method for manufacturing a semiconductor device includes: forming an oxide filmon a surfaceof a semiconductor substrateby bringing the surfaceinto contact with ammonia-hydrogen peroxide water mixture; forming a grooveon the surfaceby irradiating light to heat the surfacecovered with the oxide film; removing the oxide filmto expose the surface; and forming an electrodeon the exposed surface

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Nagakute, Japan

Shuhei Oki