Tokyo Electron Limited

Shuhei Ogawa

Yoshihide Kihara

Shin Hirotsu

Alok Ranjan

Masanobu Honda

Yun Han

Peter E Biolsi

Ken Kobayashi

Keigo Toyoda

Tomoyuki Oishi

Rie Inazawa, Legal Representative

Wanjae Park

A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.

Etching of polycrystalline semiconductors

A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.

Method for processing workpiece

A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a Hgas, a hydrogen halide gas, or a mixed gas containing a rare gas and a Hgas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than &#x2212;20&#xb0; C.

Plasma processing method

On an etching target film formed on a substrate, a three-layer resist is laminated. This three-layer resist includes an organic film and a resist film developed into a resist pattern. Through the resist pattern, the organic film is etched into a mask pattern through which the etching target film will be etched. The organic film is etched with plasma which is obtained by exciting a process gas containing carbon dioxide and hydrogen to the plasma state. This scheme makes it possible to form a high perpendicularity mask pattern in the organic film.

Method for manufacturing semiconductor device and storage medium

The present invention is a method of etching a lower layer film () of an organic material formed on a surface layer () of a substrate, using an upper layer film () of an Si-containing organic material as a mask. A mixed gas containing an NHgas and an Ogas is supplied into the processing vessel as an etching gas, so as to perform etching by a plasma of the etching gas. When the etching gas is supplied into the processing vessel, a CD shift value of etching can be controlled by adjusting a flow ratio of Ogas to the NHgas. Specifically, a satisfactory CD shift value can be obtained when the flow ratio is from 0.5 to 20%, and preferably, 5 to 10%.

Etching method

On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF/CHF/N/Omixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.

Growing community of inventors

Miyagi, Japan

Shuhei Ogawa